INIS
performance
100%
substrates
100%
gallium arsenides
100%
levels
80%
strains
60%
geometry
40%
capacity
20%
surfaces
20%
interactions
20%
devices
20%
fabrication
20%
layers
20%
stacks
20%
configuration
20%
yields
20%
thickness
20%
compressibility
20%
Physics
Performance
100%
Substrates
100%
Strain
100%
Geometry
66%
Compressibility
33%
Yield Point
33%
Fabrication
33%
Shapes
33%
Transferring
33%
Material Science
Gallium Arsenide
100%
Electronics
100%
Poly(Dimethylsiloxane)
40%
Material
40%
Formability
40%
Compressibility
20%
Devices
20%
Surface
20%
Mechanical Strength
20%
Chemistry
Concentration
100%
Strain
75%
Compressibility
25%
Yield Point
25%
Surface
25%
Strength
25%
Thickness
25%