Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors

Antonio Facchetti; Myung Han Yoon; Charlotte L. Stern; Howard E. Katz; Tobin J. Marks

doi:10.1002/anie.200351253

Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors

Antonio Facchetti, Myung Han Yoon, Charlotte L. Stern, Howard E. Katz, Tobin J. Marks^*

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

427 Scopus citations

Abstract

A new family of perfluoroarene-modified thiophene semiconductors 1-3 has been synthesized to assess the influence of perfluoroarene introduction and regiochemistry on molecular and thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm²V ^-1s^-1 whereas 2 and 3 exhibit p-type behavior. These results show that the origin of n-type carrier mobility is not solely a consequence of solution/film LUMO and HOMO energies.

Original language	English (US)
Pages (from-to)	3900-3903
Number of pages	4
Journal	Angewandte Chemie - International Edition
Volume	42
Issue number	33
DOIs	https://doi.org/10.1002/anie.200351253
State	Published - Aug 25 2003

Keywords

Conducting materials
Electron transport
Fluorine
Semiconductors
Thiophene oligomers

ASJC Scopus subject areas

General Chemistry
Catalysis

Access to Document

10.1002/anie.200351253

Cite this

@article{6013bfaeba1545ea83f247106714fd54,

title = "Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors",

abstract = "A new family of perfluoroarene-modified thiophene semiconductors 1-3 has been synthesized to assess the influence of perfluoroarene introduction and regiochemistry on molecular and thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm2V -1s-1 whereas 2 and 3 exhibit p-type behavior. These results show that the origin of n-type carrier mobility is not solely a consequence of solution/film LUMO and HOMO energies.",

keywords = "Conducting materials, Electron transport, Fluorine, Semiconductors, Thiophene oligomers",

author = "Antonio Facchetti and Yoon, {Myung Han} and Stern, {Charlotte L.} and Katz, {Howard E.} and Marks, {Tobin J.}",

year = "2003",

month = aug,

day = "25",

doi = "10.1002/anie.200351253",

language = "English (US)",

volume = "42",

pages = "3900--3903",

journal = "Angewandte Chemie - International Edition",

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publisher = "John Wiley and Sons Ltd",

number = "33",

}

Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors. / Facchetti, Antonio; Yoon, Myung Han; Stern, Charlotte L. et al.
In: Angewandte Chemie - International Edition, Vol. 42, No. 33, 25.08.2003, p. 3900-3903.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Building blocks for n-type organic electronics

T2 - Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors

AU - Facchetti, Antonio

AU - Yoon, Myung Han

AU - Stern, Charlotte L.

AU - Katz, Howard E.

AU - Marks, Tobin J.

PY - 2003/8/25

Y1 - 2003/8/25

N2 - A new family of perfluoroarene-modified thiophene semiconductors 1-3 has been synthesized to assess the influence of perfluoroarene introduction and regiochemistry on molecular and thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm2V -1s-1 whereas 2 and 3 exhibit p-type behavior. These results show that the origin of n-type carrier mobility is not solely a consequence of solution/film LUMO and HOMO energies.

AB - A new family of perfluoroarene-modified thiophene semiconductors 1-3 has been synthesized to assess the influence of perfluoroarene introduction and regiochemistry on molecular and thin-film transistor properties. Compound 1 is an n-type semiconductor with a mobility approaching 0.1 cm2V -1s-1 whereas 2 and 3 exhibit p-type behavior. These results show that the origin of n-type carrier mobility is not solely a consequence of solution/film LUMO and HOMO energies.

KW - Conducting materials

KW - Electron transport

KW - Fluorine

KW - Semiconductors

KW - Thiophene oligomers

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SN - 1433-7851

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JO - Angewandte Chemie - International Edition

JF - Angewandte Chemie - International Edition

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Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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CCDC 207397: Experimental Crystal Structure Determination

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Building blocks for n-type organic electronics: Regiochemically modulated inversion of majority carrier sign in perfluoroarene-modified polythiophene semiconductors

Abstract

Keywords

ASJC Scopus subject areas

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Datasets

CCDC 207397: Experimental Crystal Structure Determination

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