Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In2O3 transparent conducting oxides

Steven P. Harvey; Thomas O. Mason; Christoph Körber; Andreas Klein

doi:10.1039/b822149a

Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In₂O₃ transparent conducting oxides

Steven P. Harvey, Thomas O. Mason, Christoph Körber, Andreas Klein

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

The electrical properties of the zinc and tin codoped indium oxide, In _(2-2x)Sn_xZn_xO₃ or ZITO, were investigated via high temperature electrical measurements over a range of pO₂. Results indicate the presence of the (2Sn_InO _i″)^x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.

Original language	English (US)
Pages (from-to)	3099-3104
Number of pages	6
Journal	Physical Chemistry Chemical Physics
Volume	11
Issue number	17
DOIs	https://doi.org/10.1039/b822149a
State	Published - 2009

ASJC Scopus subject areas

General Physics and Astronomy
Physical and Theoretical Chemistry

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title = "Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In2O3 transparent conducting oxides",

abstract = "The electrical properties of the zinc and tin codoped indium oxide, In (2-2x)SnxZnxO3 or ZITO, were investigated via high temperature electrical measurements over a range of pO2. Results indicate the presence of the (2SnInO i″)x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.",

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AU - Harvey, Steven P.

AU - Mason, Thomas O.

AU - Körber, Christoph

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N2 - The electrical properties of the zinc and tin codoped indium oxide, In (2-2x)SnxZnxO3 or ZITO, were investigated via high temperature electrical measurements over a range of pO2. Results indicate the presence of the (2SnInO i″)x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.

AB - The electrical properties of the zinc and tin codoped indium oxide, In (2-2x)SnxZnxO3 or ZITO, were investigated via high temperature electrical measurements over a range of pO2. Results indicate the presence of the (2SnInO i″)x neutral defect cluster, which is also prevalent in indium-tin-oxide. Thin films of ZITO were deposited, annealed, and analyzed via photoelectron spectroscopy. Changes in the Fermi level position and core level binding energies were attributed to the neutral defect cluster affecting the free carrier content. An important correlation has been observed for the bixbyite structure transparent conducting oxides relating the crystal structure, the bulk defect chemistry, and the surface electronic properties.

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Bulk defect chemistry and surface electronic behavior of Zn,Sn codoped In₂O₃ transparent conducting oxides

Abstract

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