Bulk photovoltaic effect and high mobility in the polar 2D semiconductor SnP2Se6

Vinod K. Sangwan, Daniel G. Chica, Ting Ching Chu, Matthew Cheng, Michael A. Quintero, Shiqiang Hao, Christopher E. Mead, Hyeonseon Choi, Rui Zu, Jyoti Sheoran, Jingyang He, Yukun Liu, Eric Qian, Craig C. Laing, Min A. Kang, Venkatraman Gopalan, Chris Wolverton, Vinayak P. Dravid, Lincoln J. Lauhon, Mark C. HersamMercouri G. Kanatzidis*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The growth of layered 2D compounds is a key ingredient in finding new phenomena in quantum materials, optoelectronics, and energy conversion. Here, we report SnP2Se6, a van der Waals chiral (R3 space group) semiconductor with an indirect bandgap of 1.36 to 1.41 electron volts. Exfoliated SnP2Se6 flakes are integrated into high-performance field-effect transistors with electron mobilities >100 cm2/Vs and on/off ratios >106 at room temperature. Upon excitation at a wavelength of 515.6 nanometer, SnP2Se6 phototransistors show high gain (>4 × 104) at low intensity (≈10−6 W/cm2) and fast photoresponse (< 5 microsecond) with concurrent gain of ≈52.9 at high intensity (≈56.6 mW/cm2) at a gate voltage of 60 V across 300-nm-thick SiO2 dielectric layer. The combination of high carrier mobility and the non-centrosymmetric crystal structure results in a strong intrinsic bulk photovoltaic effect; under local excitation at normal incidence at 532 nm, short circuit currents exceed 8 mA/cm2 at 20.6

Original languageEnglish (US)
Article numbereado8272
JournalScience Advances
Volume10
Issue number31
DOIs
StatePublished - Aug 2 2024

ASJC Scopus subject areas

  • General

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