Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe

Shujun Dai, Tao Wang*, Huimin Liu, Yihui He, Wanqi Jie

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

A thermodynamic equilibrium model for CdTe annealed under Te vapor is established, in which possible point defects and a defect reaction existing in undoped and In-doped Te-rich CdTe crystals are taken into consideration. Independent point defects, such as V Cd , Cd i , and Te i , as well as defect complexes, namely Te Cd -V Cd (B complex), TeCd2+-VCd2- (D complex), InCd+-VCd- (A-center) and Te i -V Cd (Te Cd ), are discussed based on the defect chemistry theory. More specially, the mass action law and quasi-chemical equations are used to calculate defects concentration and Fermi level in undoped and doped CdTe crystals with different indium concentrations. It is found that the Fermi level is controlled by a VCd2-, Te Cd , and B/D-complex in undoped crystal. The concentration of V Cd drops down in an obvious manner and that of Te Cd rises for doped crystal with increasing [In].

Original languageEnglish (US)
Pages (from-to)4747-4754
Number of pages8
JournalJournal of Electronic Materials
Volume45
Issue number10
DOIs
StatePublished - Oct 1 2016

Keywords

  • CdTe
  • compensation
  • Defect chemistry
  • defect complex
  • Fermi level
  • In-doped

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Fingerprint Dive into the research topics of 'Calculation of the High-Temperature Point Defects Structure in Te-Rich CdTe'. Together they form a unique fingerprint.

Cite this