Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes

Andrew Hood; Darin Hoffman; Yajun Wei; Frank Fuchs; Manijeh Razeghi

doi:10.1063/1.2172399

Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes

Andrew Hood^*, Darin Hoffman, Yajun Wei, Frank Fuchs, Manijeh Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

The residual carrier backgrounds of binary type-II InAsGaSb superlattice photodiodes with cutoff wavelengths around 5 μm have been studied in the temperature range between 20 and 200 K. By applying a capacitance-voltage measurement technique, a residual background concentration below 1015 cm-3 has been found. At temperatures below 100 K carrier freeze-out is observed with a thermal activation energy of 4.5 meV, leading to net carrier concentrations at 77 K in the mid 1014 cm-3.

Original language	English (US)
Article number	052112
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	88
Issue number	5
DOIs	https://doi.org/10.1063/1.2172399
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2172399

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@article{35ede4fca93746c5bc381002530270bf,

title = "Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes",

abstract = "The residual carrier backgrounds of binary type-II InAsGaSb superlattice photodiodes with cutoff wavelengths around 5 μm have been studied in the temperature range between 20 and 200 K. By applying a capacitance-voltage measurement technique, a residual background concentration below 1015 cm-3 has been found. At temperatures below 100 K carrier freeze-out is observed with a thermal activation energy of 4.5 meV, leading to net carrier concentrations at 77 K in the mid 1014 cm-3.",

author = "Andrew Hood and Darin Hoffman and Yajun Wei and Frank Fuchs and Manijeh Razeghi",

year = "2006",

doi = "10.1063/1.2172399",

language = "English (US)",

volume = "88",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes

AU - Hood, Andrew

AU - Hoffman, Darin

AU - Wei, Yajun

AU - Fuchs, Frank

AU - Razeghi, Manijeh

PY - 2006

Y1 - 2006

N2 - The residual carrier backgrounds of binary type-II InAsGaSb superlattice photodiodes with cutoff wavelengths around 5 μm have been studied in the temperature range between 20 and 200 K. By applying a capacitance-voltage measurement technique, a residual background concentration below 1015 cm-3 has been found. At temperatures below 100 K carrier freeze-out is observed with a thermal activation energy of 4.5 meV, leading to net carrier concentrations at 77 K in the mid 1014 cm-3.

AB - The residual carrier backgrounds of binary type-II InAsGaSb superlattice photodiodes with cutoff wavelengths around 5 μm have been studied in the temperature range between 20 and 200 K. By applying a capacitance-voltage measurement technique, a residual background concentration below 1015 cm-3 has been found. At temperatures below 100 K carrier freeze-out is observed with a thermal activation energy of 4.5 meV, leading to net carrier concentrations at 77 K in the mid 1014 cm-3.

UR - http://www.scopus.com/inward/record.url?scp=31944441852&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=31944441852&partnerID=8YFLogxK

U2 - 10.1063/1.2172399

DO - 10.1063/1.2172399

M3 - Article

AN - SCOPUS:31944441852

SN - 0003-6951

VL - 88

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 5

M1 - 052112

ER -

Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes

Abstract

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