Capacitance-voltage investigation of high-purity InAs/GaSb superlattice photodiodes

Andrew Hood*, Darin Hoffman, Yajun Wei, Frank Fuchs, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

53 Scopus citations

Abstract

The residual carrier backgrounds of binary type-II InAsGaSb superlattice photodiodes with cutoff wavelengths around 5 μm have been studied in the temperature range between 20 and 200 K. By applying a capacitance-voltage measurement technique, a residual background concentration below 1015 cm-3 has been found. At temperatures below 100 K carrier freeze-out is observed with a thermal activation energy of 4.5 meV, leading to net carrier concentrations at 77 K in the mid 1014 cm-3.

Original languageEnglish (US)
Article number052112
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume88
Issue number5
DOIs
StatePublished - Feb 10 2006

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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