Carbohydrate-Assisted Combustion Synthesis to Realize High-Performance Oxide Transistors

Binghao Wang; Li Zeng; Wei Huang; Ferdinand S. Melkonyan; William C. Sheets; Lifeng Chi; Michael J. Bedzyk; Tobin J. Marks; Antonio Facchetti

doi:10.1021/jacs.6b02309

Carbohydrate-Assisted Combustion Synthesis to Realize High-Performance Oxide Transistors

Binghao Wang, Li Zeng, Wei Huang, Ferdinand S. Melkonyan, William C. Sheets, Lifeng Chi, Michael J. Bedzyk^*, Tobin J. Marks, Antonio Facchetti

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

61 Scopus citations

Abstract

Owing to high carrier mobilities, good environmental/thermal stability, excellent optical transparency, and compatibility with solution processing, thin-film transistors (TFTs) based on amorphous metal oxide semiconductors (AOSs) are promising alternatives to those based on amorphous silicon (a-Si:H) and low-temperature (<600 °C) poly-silicon (LTPS). However, solution-processed display-relevant indium-gallium-tin-oxide (IGZO) TFTs suffer from low carrier mobilities and/or inferior bias-stress stability versus their sputtered counterparts. Here we report that three types of environmentally benign carbohydrates (sorbitol, sucrose, and glucose) serve as especially efficient fuels for IGZO film combustion synthesis to yield high-performance TFTs. The results indicate that these carbohydrates assist the combustion process by lowering the ignition threshold temperature and, for optimal stoichiometries, enhancing the reaction enthalpy. IGZO TFT mobilities are increased to >8 cm² V^-1 s^-1 on SiO₂/Si gate dielectrics with significantly improved bias-stress stability. The first correlations between precursor combustion enthalpy and a-MO densification/charge transport are established.

Original language	English (US)
Pages (from-to)	7067-7074
Number of pages	8
Journal	Journal of the American Chemical Society
Volume	138
Issue number	22
DOIs	https://doi.org/10.1021/jacs.6b02309
State	Published - Jun 8 2016

Funding

We thank ONR (MURI N00014-11-1-0690), the Northwestern U. MRSEC (NSF DMR-1121262), AFOSR (FA9550-08-1- 0331), and Polyera Corp. for support of this research. This work made use of the J. B. Cohen X-ray Diffraction Facility, EPIC facility, Keck-II facility, and SPID facility of the NUANCE Center at Northwestern U., which received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205); the MRSEC program (NSF DMR-1121262) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. B.W. and W.H. thank the joint-Ph.D. program supported by China Scholarship Council for fellowships.

ASJC Scopus subject areas

General Chemistry
Biochemistry
Catalysis
Colloid and Surface Chemistry

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10.1021/jacs.6b02309

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@article{e7d843ea110d4f279b6b26ec4b72cb7e,

title = "Carbohydrate-Assisted Combustion Synthesis to Realize High-Performance Oxide Transistors",

abstract = "Owing to high carrier mobilities, good environmental/thermal stability, excellent optical transparency, and compatibility with solution processing, thin-film transistors (TFTs) based on amorphous metal oxide semiconductors (AOSs) are promising alternatives to those based on amorphous silicon (a-Si:H) and low-temperature (<600 °C) poly-silicon (LTPS). However, solution-processed display-relevant indium-gallium-tin-oxide (IGZO) TFTs suffer from low carrier mobilities and/or inferior bias-stress stability versus their sputtered counterparts. Here we report that three types of environmentally benign carbohydrates (sorbitol, sucrose, and glucose) serve as especially efficient fuels for IGZO film combustion synthesis to yield high-performance TFTs. The results indicate that these carbohydrates assist the combustion process by lowering the ignition threshold temperature and, for optimal stoichiometries, enhancing the reaction enthalpy. IGZO TFT mobilities are increased to >8 cm2 V-1 s-1 on SiO2/Si gate dielectrics with significantly improved bias-stress stability. The first correlations between precursor combustion enthalpy and a-MO densification/charge transport are established.",

author = "Binghao Wang and Li Zeng and Wei Huang and Melkonyan, {Ferdinand S.} and Sheets, {William C.} and Lifeng Chi and Bedzyk, {Michael J.} and Marks, {Tobin J.} and Antonio Facchetti",

note = "Funding Information: We thank ONR (MURI N00014-11-1-0690), the Northwestern U. MRSEC (NSF DMR-1121262), AFOSR (FA9550-08-1- 0331), and Polyera Corp. for support of this research. This work made use of the J. B. Cohen X-ray Diffraction Facility, EPIC facility, Keck-II facility, and SPID facility of the NUANCE Center at Northwestern U., which received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205); the MRSEC program (NSF DMR-1121262) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. B.W. and W.H. thank the joint-Ph.D. program supported by China Scholarship Council for fellowships. Publisher Copyright: {\textcopyright} 2016 American Chemical Society.",

year = "2016",

month = jun,

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doi = "10.1021/jacs.6b02309",

language = "English (US)",

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AU - Wang, Binghao

AU - Zeng, Li

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AU - Sheets, William C.

AU - Chi, Lifeng

AU - Bedzyk, Michael J.

AU - Marks, Tobin J.

AU - Facchetti, Antonio

N1 - Funding Information: We thank ONR (MURI N00014-11-1-0690), the Northwestern U. MRSEC (NSF DMR-1121262), AFOSR (FA9550-08-1- 0331), and Polyera Corp. for support of this research. This work made use of the J. B. Cohen X-ray Diffraction Facility, EPIC facility, Keck-II facility, and SPID facility of the NUANCE Center at Northwestern U., which received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205); the MRSEC program (NSF DMR-1121262) at the Materials Research Center; the International Institute for Nanotechnology (IIN); the Keck Foundation; and the State of Illinois, through the IIN. B.W. and W.H. thank the joint-Ph.D. program supported by China Scholarship Council for fellowships. Publisher Copyright: © 2016 American Chemical Society.

PY - 2016/6/8

Y1 - 2016/6/8

N2 - Owing to high carrier mobilities, good environmental/thermal stability, excellent optical transparency, and compatibility with solution processing, thin-film transistors (TFTs) based on amorphous metal oxide semiconductors (AOSs) are promising alternatives to those based on amorphous silicon (a-Si:H) and low-temperature (<600 °C) poly-silicon (LTPS). However, solution-processed display-relevant indium-gallium-tin-oxide (IGZO) TFTs suffer from low carrier mobilities and/or inferior bias-stress stability versus their sputtered counterparts. Here we report that three types of environmentally benign carbohydrates (sorbitol, sucrose, and glucose) serve as especially efficient fuels for IGZO film combustion synthesis to yield high-performance TFTs. The results indicate that these carbohydrates assist the combustion process by lowering the ignition threshold temperature and, for optimal stoichiometries, enhancing the reaction enthalpy. IGZO TFT mobilities are increased to >8 cm2 V-1 s-1 on SiO2/Si gate dielectrics with significantly improved bias-stress stability. The first correlations between precursor combustion enthalpy and a-MO densification/charge transport are established.

AB - Owing to high carrier mobilities, good environmental/thermal stability, excellent optical transparency, and compatibility with solution processing, thin-film transistors (TFTs) based on amorphous metal oxide semiconductors (AOSs) are promising alternatives to those based on amorphous silicon (a-Si:H) and low-temperature (<600 °C) poly-silicon (LTPS). However, solution-processed display-relevant indium-gallium-tin-oxide (IGZO) TFTs suffer from low carrier mobilities and/or inferior bias-stress stability versus their sputtered counterparts. Here we report that three types of environmentally benign carbohydrates (sorbitol, sucrose, and glucose) serve as especially efficient fuels for IGZO film combustion synthesis to yield high-performance TFTs. The results indicate that these carbohydrates assist the combustion process by lowering the ignition threshold temperature and, for optimal stoichiometries, enhancing the reaction enthalpy. IGZO TFT mobilities are increased to >8 cm2 V-1 s-1 on SiO2/Si gate dielectrics with significantly improved bias-stress stability. The first correlations between precursor combustion enthalpy and a-MO densification/charge transport are established.

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Carbohydrate-Assisted Combustion Synthesis to Realize High-Performance Oxide Transistors

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