Carbon-doped GaAs single junction solar microcells grown in multilayer epitaxial assemblies

Dongseok Kang, Shermin Arab, Stephen B. Cronin, Xiuling Li, John A. Rogers, Jongseung Yoon*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


A stack design for carbon-doped GaAs single junction solar microcells grown in triple-layer epitaxial assemblies is presented. As-grown materials exhibit improved uniformity of photovoltaic performance compared to zinc-doped systems due to the lack of mobile dopants while a slight degradation exists in middle and bottom devices. Detailed electrical and optical characterizations of devices together with systematic studies of acceptor reactivation reveal carbon-related defects accompanied by carrier compensation, and associated scattering and recombination centers are primarily responsible for the degraded contact properties and photovoltaic performance, resulting from prolonged thermal treatments of early-grown materials during the multilayer epitaxial growth.

Original languageEnglish (US)
Article number253902
JournalApplied Physics Letters
Issue number25
StatePublished - Jun 24 2013

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Carbon-doped GaAs single junction solar microcells grown in multilayer epitaxial assemblies'. Together they form a unique fingerprint.

Cite this