Carrier dynamics studies of thick GaN grown by H VPE

G. E. Bunea; M. S. Ünlü; B. B. Goldberg

Carrier dynamics studies of thick GaN grown by H VPE

G. E. Bunea^*, M. S. Ünlü, B. B. Goldberg

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

Abstract

We present a comparison between optical properties of two samples grown by hydride vapor phase epitaxy, one directly on Sapphire substrate (non-ELO) and one epitaxial lateral overgrown (ELO) on SiU2 patterned Sapphire substrate. The ELO material shows an improvement of the UV emission and slight decrease of the yellow emission. The band edge emission is red shifted due to the relaxation of the compressive strain. In spite of the increase in the UV emission, the lifetime of the excitons in the ELO material is more than twice lower than non-ELO material. We attribute this to screening effects of the background electron concentration.

Original language	English (US)
Journal	Materials Research Society Symposium - Proceedings
Volume	595
State	Published - Dec 1 2000

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

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title = "Carrier dynamics studies of thick GaN grown by H VPE",

abstract = "We present a comparison between optical properties of two samples grown by hydride vapor phase epitaxy, one directly on Sapphire substrate (non-ELO) and one epitaxial lateral overgrown (ELO) on SiU2 patterned Sapphire substrate. The ELO material shows an improvement of the UV emission and slight decrease of the yellow emission. The band edge emission is red shifted due to the relaxation of the compressive strain. In spite of the increase in the UV emission, the lifetime of the excitons in the ELO material is more than twice lower than non-ELO material. We attribute this to screening effects of the background electron concentration.",

author = "Bunea, {G. E.} and {\"U}nl{\"u}, {M. S.} and Goldberg, {B. B.}",

year = "2000",

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language = "English (US)",

volume = "595",

journal = "Materials Research Society Symposium - Proceedings",

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TY - JOUR

T1 - Carrier dynamics studies of thick GaN grown by H VPE

AU - Bunea, G. E.

AU - Ünlü, M. S.

AU - Goldberg, B. B.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - We present a comparison between optical properties of two samples grown by hydride vapor phase epitaxy, one directly on Sapphire substrate (non-ELO) and one epitaxial lateral overgrown (ELO) on SiU2 patterned Sapphire substrate. The ELO material shows an improvement of the UV emission and slight decrease of the yellow emission. The band edge emission is red shifted due to the relaxation of the compressive strain. In spite of the increase in the UV emission, the lifetime of the excitons in the ELO material is more than twice lower than non-ELO material. We attribute this to screening effects of the background electron concentration.

AB - We present a comparison between optical properties of two samples grown by hydride vapor phase epitaxy, one directly on Sapphire substrate (non-ELO) and one epitaxial lateral overgrown (ELO) on SiU2 patterned Sapphire substrate. The ELO material shows an improvement of the UV emission and slight decrease of the yellow emission. The band edge emission is red shifted due to the relaxation of the compressive strain. In spite of the increase in the UV emission, the lifetime of the excitons in the ELO material is more than twice lower than non-ELO material. We attribute this to screening effects of the background electron concentration.

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M3 - Article

AN - SCOPUS:33751335262

SN - 0272-9172

VL - 595

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

ER -

Carrier dynamics studies of thick GaN grown by H VPE

Abstract

ASJC Scopus subject areas

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