Carrier dynamics studies of thick GaN grown by HVPE

G. E. Bunea*, M. S. Unlu, B. B. Goldberg

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

Abstract

We present a comparison between optical properties of two samples grown by hydride vapor phase epitaxy, one directly on Sapphire substrate (non-ELO) and one epitaxial lateral overgrown (ELO) on SiO2 patterned Sapphire substrate. The ELO material shows an improvement of the UV emission and slight decrease of the yellow emission. The band edge emission is red shifted due to the relaxation of the compressive strain. In spite of the increase in the UV emission, the lifetime of the excitons in the ELO material is more than twice lower than non-ELO material. We attribute this to screening effects of the background electron concentration.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
Volume595
StatePublished - Jan 1 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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