Catalyst incorporation at defects during nanowire growth

Eric R. Hemesath, Daniel K. Schreiber, Emine B. Gulsoy, Christian F. Kisielowski, Amanda K. Petford-Long, Peter W. Voorhees, Lincoln J. Lauhon*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

52 Scopus citations


Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in 〈110〉 oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in 〈112〉 oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst-nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires.

Original languageEnglish (US)
Pages (from-to)167-171
Number of pages5
JournalNano letters
Issue number1
StatePublished - Jan 11 2012


  • Nanowire
  • TEM
  • crystal growth
  • grain boundary
  • impurity
  • tomography

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Mechanical Engineering
  • Bioengineering
  • General Chemistry
  • General Materials Science


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