Catalyst incorporation at defects during nanowire growth

Eric R. Hemesath, Daniel K. Schreiber, Emine B. Gulsoy, Christian F. Kisielowski, Amanda K. Petford-Long, Peter W. Voorhees, Lincoln J. Lauhon*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in 〈110〉 oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in 〈112〉 oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst-nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires.

Original languageEnglish (US)
Pages (from-to)167-171
Number of pages5
JournalNano letters
Volume12
Issue number1
DOIs
StatePublished - Jan 11 2012

Keywords

  • Nanowire
  • TEM
  • crystal growth
  • grain boundary
  • impurity
  • tomography

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Catalyst incorporation at defects during nanowire growth'. Together they form a unique fingerprint.

Cite this