Catalyst incorporation at defects during nanowire growth

Eric R. Hemesath; Daniel K. Schreiber; Emine B. Gulsoy; Christian F. Kisielowski; Amanda K. Petford-Long; Peter W. Voorhees; Lincoln J. Lauhon

doi:10.1021/nl203259f

Catalyst incorporation at defects during nanowire growth

Eric R. Hemesath, Daniel K. Schreiber, Emine B. Gulsoy, Christian F. Kisielowski, Amanda K. Petford-Long, Peter W. Voorhees, Lincoln J. Lauhon^*

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

55 Scopus citations

Abstract

Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in 〈110〉 oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in 〈112〉 oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst-nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires.

Original language	English (US)
Pages (from-to)	167-171
Number of pages	5
Journal	Nano letters
Volume	12
Issue number	1
DOIs	https://doi.org/10.1021/nl203259f
State	Published - Jan 11 2012

Keywords

Nanowire
TEM
crystal growth
grain boundary
impurity
tomography

ASJC Scopus subject areas

Bioengineering
General Chemistry
General Materials Science
Condensed Matter Physics
Mechanical Engineering

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10.1021/nl203259f

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title = "Catalyst incorporation at defects during nanowire growth",

abstract = "Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in 〈110〉 oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in 〈112〉 oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst-nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires.",

keywords = "Nanowire, TEM, crystal growth, grain boundary, impurity, tomography",

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T1 - Catalyst incorporation at defects during nanowire growth

AU - Hemesath, Eric R.

AU - Schreiber, Daniel K.

AU - Gulsoy, Emine B.

AU - Kisielowski, Christian F.

AU - Petford-Long, Amanda K.

AU - Voorhees, Peter W.

AU - Lauhon, Lincoln J.

PY - 2012/1/11

Y1 - 2012/1/11

N2 - Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in 〈110〉 oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in 〈112〉 oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst-nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires.

AB - Scanning and transmission electron microscopy was used to correlate the structure of planar defects with the prevalence of Au catalyst atom incorporation in Si nanowires. Site-specific high-resolution imaging along orthogonal zone axes, enabled by advances in focused ion beam cross sectioning, reveals substantial incorporation of catalyst atoms at grain boundaries in 〈110〉 oriented nanowires. In contrast, (111) stacking faults that generate new polytypes in 〈112〉 oriented nanowires do not show preferential catalyst incorporation. Tomographic reconstruction of the catalyst-nanowire interface is used to suggest criteria for the stability of planar defects that trap impurity atoms in catalyst-mediated nanowires.

KW - Nanowire

KW - TEM

KW - crystal growth

KW - grain boundary

KW - impurity

KW - tomography

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Catalyst incorporation at defects during nanowire growth

Abstract

Keywords

ASJC Scopus subject areas

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