Changes in optical properties of GaAsN during annealing

Ting Liu; S. Chandril; E. D. Schires; N. Wu; Xinqi Chen; D. Korakakis; T. H. Myers

Changes in optical properties of GaAsN during annealing

Ting Liu^*, S. Chandril, E. D. Schires, N. Wu, Xinqi Chen, D. Korakakis, T. H. Myers

^*Corresponding author for this work

NUANCE - Atomic and Nanoscale Characterization Experimental Center

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

GaAs _1-xN _x layers and quantum dot-like structures were grown on (100) GaAs substrates by molecular beam epitaxy. The dependence of photoluminescence emission spectra on annealing temperature is consistent with literature at lower temperatures but after annealing at 750 °C a net red-shift is consistently observed. X-ray photoelectron spectroscopy measurements indicate that for different annealing times and temperatures, the nitrogen and arsenic surface concentrations changed compared to that of as-grown samples, specifically arsenic is lost from the material. Raman measurements are consistent with the trends in photoluminescence and also suggest the loss of arsenic occurs at higher annealing temperatures in both samples capped with GaAs and uncapped samples.

Original language	English (US)
Title of host publication	Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications
Pages	541-545
Number of pages	5
State	Published - 2006
Event	2005 MRS Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	891
ISSN (Print)	0272-9172

Other

Other	2005 MRS Fall Meeting
Country/Territory	United States
City	Boston, MA
Period	11/28/05 → 12/2/05

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@inproceedings{a16f452b2b8a4145a49d1f8bd9fce2fe,

title = "Changes in optical properties of GaAsN during annealing",

abstract = "GaAs 1-xN x layers and quantum dot-like structures were grown on (100) GaAs substrates by molecular beam epitaxy. The dependence of photoluminescence emission spectra on annealing temperature is consistent with literature at lower temperatures but after annealing at 750 °C a net red-shift is consistently observed. X-ray photoelectron spectroscopy measurements indicate that for different annealing times and temperatures, the nitrogen and arsenic surface concentrations changed compared to that of as-grown samples, specifically arsenic is lost from the material. Raman measurements are consistent with the trends in photoluminescence and also suggest the loss of arsenic occurs at higher annealing temperatures in both samples capped with GaAs and uncapped samples.",

author = "Ting Liu and S. Chandril and Schires, {E. D.} and N. Wu and Xinqi Chen and D. Korakakis and Myers, {T. H.}",

year = "2006",

language = "English (US)",

isbn = "1558998454",

series = "Materials Research Society Symposium Proceedings",

pages = "541--545",

booktitle = "Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications",

}

Liu, T, Chandril, S, Schires, ED, Wu, N, Chen, X, Korakakis, D & Myers, TH 2006, Changes in optical properties of GaAsN during annealing. in Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. Materials Research Society Symposium Proceedings, vol. 891, pp. 541-545, 2005 MRS Fall Meeting, Boston, MA, United States, 11/28/05.

Changes in optical properties of GaAsN during annealing. / Liu, Ting; Chandril, S.; Schires, E. D. et al.
Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications. 2006. p. 541-545 (Materials Research Society Symposium Proceedings; Vol. 891).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Changes in optical properties of GaAsN during annealing

AU - Liu, Ting

AU - Chandril, S.

AU - Schires, E. D.

AU - Wu, N.

AU - Chen, Xinqi

AU - Korakakis, D.

AU - Myers, T. H.

PY - 2006

Y1 - 2006

N2 - GaAs 1-xN x layers and quantum dot-like structures were grown on (100) GaAs substrates by molecular beam epitaxy. The dependence of photoluminescence emission spectra on annealing temperature is consistent with literature at lower temperatures but after annealing at 750 °C a net red-shift is consistently observed. X-ray photoelectron spectroscopy measurements indicate that for different annealing times and temperatures, the nitrogen and arsenic surface concentrations changed compared to that of as-grown samples, specifically arsenic is lost from the material. Raman measurements are consistent with the trends in photoluminescence and also suggest the loss of arsenic occurs at higher annealing temperatures in both samples capped with GaAs and uncapped samples.

AB - GaAs 1-xN x layers and quantum dot-like structures were grown on (100) GaAs substrates by molecular beam epitaxy. The dependence of photoluminescence emission spectra on annealing temperature is consistent with literature at lower temperatures but after annealing at 750 °C a net red-shift is consistently observed. X-ray photoelectron spectroscopy measurements indicate that for different annealing times and temperatures, the nitrogen and arsenic surface concentrations changed compared to that of as-grown samples, specifically arsenic is lost from the material. Raman measurements are consistent with the trends in photoluminescence and also suggest the loss of arsenic occurs at higher annealing temperatures in both samples capped with GaAs and uncapped samples.

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M3 - Conference contribution

AN - SCOPUS:33747368731

SN - 1558998454

SN - 9781558998452

T3 - Materials Research Society Symposium Proceedings

SP - 541

EP - 545

BT - Progress in Semiconductor Materials V - Novel Materials and Electronic and Optoelectronic Applications

T2 - 2005 MRS Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -

Changes in optical properties of GaAsN during annealing

Abstract

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ASJC Scopus subject areas

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