Channeling in Manufacturing Sharp Junctions: A Molecular Dynamics Study

J. Sillanpää*, K. Nordlund, J. Keinonen

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


We examine how channeling affects ion implantation depth profiles in silicon and whether channeling can be beneficial for achieving a sharp end-of-range in the profile. Accurate modeling of channeling requires a molecular dynamics program with a realistic electronic stopping model. We have implemented the local electronic stopping model originally proposed by Cai et al. and the Firsov model to describe energy losses in inelastic collisions between recoiling ions and target atoms. Simulations of 0.25-15keV B and As ions in the 〈100〉, 〈110〉, 〈111〉 and off-channel directions in silicon show that channeling effects become unimportant at keV energies in the 〈100〉 and 〈111〉 directions, whereas in the 〈110〉 channel they persist down to the very lowest energies. Implantation into the 〈100〉 channel gives optimal sharpness of the profiles down to implantation depths of roughly 400 Å, indicating that no tilt is necessary for the very shallow implants needed in next-generation semiconductors.

Original languageEnglish (US)
Pages (from-to)272-274
Number of pages3
JournalPhysica Scripta T
StatePublished - 1999

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Mathematical Physics
  • Condensed Matter Physics
  • General Physics and Astronomy


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