Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

H. Zhao; Y. Q. Xu; H. Q. Ni; S. Y. Zhang; Donghai Wu; Q. Han; R. H. Wu; Z. C. Niu

doi:10.1063/1.2164539

Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

H. Zhao^*, Y. Q. Xu, H. Q. Ni, S. Y. Zhang, Donghai Wu, Q. Han, R. H. Wu, Z. C. Niu

^*Corresponding author for this work

Center for Quantum Devices (CQD)

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Effect of rapid thermal annealing on photoluminescence (PL) properties of InGaAs, InGaNAs, InGaAsSb, and InGaNAsSb quantum wells (QWs) grown by molecular-beam epitaxy was systematically investigated. Variations of PL intensity and full width at half maximum were recorded from the samples annealed at different conditions. The PL peak intensities of InGaAs and InGaNAs QWs initially increase and then decrease when the annealing temperature increased from 600 to 900 °C, but the drawing lines of InGaAsSb and InGaNAsSb take on an "M" shape. The enhancement of the PL intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition's homogenization. In the 800-900 °C high-temperature region, interdiffusion is likely the main factor influencing the PL intensity. In-N is easily formed during annealing which will prevent In out diffusion, so the largest blueshift was observed in InGaAsSb in the high-temperature region.

Original language	English (US)
Article number	034903
Journal	Journal of Applied Physics
Volume	99
Issue number	3
DOIs	https://doi.org/10.1063/1.2164539
State	Published - Feb 1 2006

ASJC Scopus subject areas

General Physics and Astronomy

Access to Document

10.1063/1.2164539

Cite this

@article{6d9a64fe65b8472996ae271c8e1beedb,

title = "Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy",

abstract = "Effect of rapid thermal annealing on photoluminescence (PL) properties of InGaAs, InGaNAs, InGaAsSb, and InGaNAsSb quantum wells (QWs) grown by molecular-beam epitaxy was systematically investigated. Variations of PL intensity and full width at half maximum were recorded from the samples annealed at different conditions. The PL peak intensities of InGaAs and InGaNAs QWs initially increase and then decrease when the annealing temperature increased from 600 to 900 °C, but the drawing lines of InGaAsSb and InGaNAsSb take on an {"}M{"} shape. The enhancement of the PL intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition's homogenization. In the 800-900 °C high-temperature region, interdiffusion is likely the main factor influencing the PL intensity. In-N is easily formed during annealing which will prevent In out diffusion, so the largest blueshift was observed in InGaAsSb in the high-temperature region.",

author = "H. Zhao and Xu, {Y. Q.} and Ni, {H. Q.} and Zhang, {S. Y.} and Donghai Wu and Q. Han and Wu, {R. H.} and Niu, {Z. C.}",

note = "Funding Information: This work is partly supported by the National Natural Science Foundation of China (Grant Nos. 90201026 and 60137020), the National High Technology Research and Development Program, the Special Funds for Major State Basic Research Project, and the Post-doctoral Science Foundation of China. FIG. 1. Room-temperature photoluminescence (RTPL) spectrum of as-grown samples S1206 (dotted line) and S1223 (solid line). FIG. 2. Enhancement factor vs the annealing temperature of InGaNAs and InGaAs QWs grown in S1206. FIG. 3. Enhancement factor vs the annealing temperature of InGaNAsSb and InGaAsSb QWs grown in S1223. FIG. 4. The FWHM changes of S1206 (a) and S1223 (b) with the annealing temperature. FIG. 5. The blueshift of S1206 and S1223 with annealing temperature. ",

year = "2006",

month = feb,

day = "1",

doi = "10.1063/1.2164539",

language = "English (US)",

volume = "99",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "3",

}

TY - JOUR

T1 - Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

AU - Zhao, H.

AU - Xu, Y. Q.

AU - Ni, H. Q.

AU - Zhang, S. Y.

AU - Wu, Donghai

AU - Han, Q.

AU - Wu, R. H.

AU - Niu, Z. C.

N1 - Funding Information: This work is partly supported by the National Natural Science Foundation of China (Grant Nos. 90201026 and 60137020), the National High Technology Research and Development Program, the Special Funds for Major State Basic Research Project, and the Post-doctoral Science Foundation of China. FIG. 1. Room-temperature photoluminescence (RTPL) spectrum of as-grown samples S1206 (dotted line) and S1223 (solid line). FIG. 2. Enhancement factor vs the annealing temperature of InGaNAs and InGaAs QWs grown in S1206. FIG. 3. Enhancement factor vs the annealing temperature of InGaNAsSb and InGaAsSb QWs grown in S1223. FIG. 4. The FWHM changes of S1206 (a) and S1223 (b) with the annealing temperature. FIG. 5. The blueshift of S1206 and S1223 with annealing temperature.

PY - 2006/2/1

Y1 - 2006/2/1

N2 - Effect of rapid thermal annealing on photoluminescence (PL) properties of InGaAs, InGaNAs, InGaAsSb, and InGaNAsSb quantum wells (QWs) grown by molecular-beam epitaxy was systematically investigated. Variations of PL intensity and full width at half maximum were recorded from the samples annealed at different conditions. The PL peak intensities of InGaAs and InGaNAs QWs initially increase and then decrease when the annealing temperature increased from 600 to 900 °C, but the drawing lines of InGaAsSb and InGaNAsSb take on an "M" shape. The enhancement of the PL intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition's homogenization. In the 800-900 °C high-temperature region, interdiffusion is likely the main factor influencing the PL intensity. In-N is easily formed during annealing which will prevent In out diffusion, so the largest blueshift was observed in InGaAsSb in the high-temperature region.

AB - Effect of rapid thermal annealing on photoluminescence (PL) properties of InGaAs, InGaNAs, InGaAsSb, and InGaNAsSb quantum wells (QWs) grown by molecular-beam epitaxy was systematically investigated. Variations of PL intensity and full width at half maximum were recorded from the samples annealed at different conditions. The PL peak intensities of InGaAs and InGaNAs QWs initially increase and then decrease when the annealing temperature increased from 600 to 900 °C, but the drawing lines of InGaAsSb and InGaNAsSb take on an "M" shape. The enhancement of the PL intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition's homogenization. In the 800-900 °C high-temperature region, interdiffusion is likely the main factor influencing the PL intensity. In-N is easily formed during annealing which will prevent In out diffusion, so the largest blueshift was observed in InGaAsSb in the high-temperature region.

UR - http://www.scopus.com/inward/record.url?scp=33645505738&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33645505738&partnerID=8YFLogxK

U2 - 10.1063/1.2164539

DO - 10.1063/1.2164539

M3 - Article

AN - SCOPUS:33645505738

SN - 0021-8979

VL - 99

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 3

M1 - 034903

ER -

Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this