Keyphrases
Molecular Beam Epitaxy
100%
InGaSb
100%
GaAs Quantum Well
100%
Photoluminescence Intensity
100%
Rapid Thermal Annealing
100%
Quantum Well
66%
Annealing
66%
Full Width at Half Maximum
66%
InGaAs
66%
High Temperature Region
66%
InGaNAs
66%
Dislocation
33%
Photoluminescence
33%
Interdiffusion
33%
Annealing Temperature
33%
Blue Shift
33%
Photoluminescence Properties
33%
M-shaped
33%
Engineering
Gallium Arsenide
100%
Rapid Thermal Annealing
100%
Quantum Well
100%
Indium Gallium Arsenide
66%
Temperature Region
66%
Peak Intensity
33%
Blueshift
33%
Main Factor
33%
Annealing Temperature
33%
Interdiffusion
33%
Phase Composition
33%
Material Science
Gallium Arsenide
100%
Annealing
100%
Photoluminescence
100%
Molecular Beam Epitaxy
100%
Quantum Well
100%
Indium Gallium Arsenide
40%
Homogenization
20%
Phase Composition
20%