Characteristics of high-quality p-type AlxGa1-xN/GaN superlattices

A. Yasan; R. McClintock; S. R. Darvish; Z. Lin; K. Mi; P. Kung; M. Razeghi

doi:10.1063/1.1463708

Characteristics of high-quality p-type Al_xGa_1-xN/GaN superlattices

A. Yasan^*, R. McClintock, S. R. Darvish, Z. Lin, K. Mi, P. Kung, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Very-high-quality p-type Al_xGa_1-xN/GaN superlattices have been grown by low-pressure metalorganic vapor-phase epitaxy through optimization of Mg flow and the period of the superlattice. For the superlattice with x=26%, the hole concentration reaches a high value of 4.2×10 ¹⁸cm^-3 with a resistivity as low as 0.19 cm by Hall measurement. Admittance spectroscopy was performed in order to investigate the electrical properties of the superlattices. These measurements confirm that superlattices with a larger period and higher Al composition have higher hole concentration and lower resistivity, as predicted by theory.

Original language	English (US)
Pages (from-to)	2108-2110
Number of pages	3
Journal	Applied Physics Letters
Volume	80
Issue number	12
DOIs	https://doi.org/10.1063/1.1463708
State	Published - Mar 25 2002

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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abstract = "Very-high-quality p-type AlxGa1-xN/GaN superlattices have been grown by low-pressure metalorganic vapor-phase epitaxy through optimization of Mg flow and the period of the superlattice. For the superlattice with x=26%, the hole concentration reaches a high value of 4.2×10 18cm-3 with a resistivity as low as 0.19 cm by Hall measurement. Admittance spectroscopy was performed in order to investigate the electrical properties of the superlattices. These measurements confirm that superlattices with a larger period and higher Al composition have higher hole concentration and lower resistivity, as predicted by theory.",

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T1 - Characteristics of high-quality p-type AlxGa1-xN/GaN superlattices

AU - Yasan, A.

AU - McClintock, R.

AU - Darvish, S. R.

AU - Lin, Z.

AU - Mi, K.

AU - Kung, P.

AU - Razeghi, M.

PY - 2002/3/25

Y1 - 2002/3/25

N2 - Very-high-quality p-type AlxGa1-xN/GaN superlattices have been grown by low-pressure metalorganic vapor-phase epitaxy through optimization of Mg flow and the period of the superlattice. For the superlattice with x=26%, the hole concentration reaches a high value of 4.2×10 18cm-3 with a resistivity as low as 0.19 cm by Hall measurement. Admittance spectroscopy was performed in order to investigate the electrical properties of the superlattices. These measurements confirm that superlattices with a larger period and higher Al composition have higher hole concentration and lower resistivity, as predicted by theory.

AB - Very-high-quality p-type AlxGa1-xN/GaN superlattices have been grown by low-pressure metalorganic vapor-phase epitaxy through optimization of Mg flow and the period of the superlattice. For the superlattice with x=26%, the hole concentration reaches a high value of 4.2×10 18cm-3 with a resistivity as low as 0.19 cm by Hall measurement. Admittance spectroscopy was performed in order to investigate the electrical properties of the superlattices. These measurements confirm that superlattices with a larger period and higher Al composition have higher hole concentration and lower resistivity, as predicted by theory.

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Characteristics of high-quality p-type Al_xGa_1-xN/GaN superlattices

Abstract

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