Characteristics of high-quality p-type AlxGa1-xN/GaN superlattices

A. Yasan*, R. McClintock, S. R. Darvish, Z. Lin, K. Mi, P. Kung, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

22 Scopus citations


Very-high-quality p-type AlxGa1-xN/GaN superlattices have been grown by low-pressure metalorganic vapor-phase epitaxy through optimization of Mg flow and the period of the superlattice. For the superlattice with x=26%, the hole concentration reaches a high value of 4.2×10 18cm-3 with a resistivity as low as 0.19 cm by Hall measurement. Admittance spectroscopy was performed in order to investigate the electrical properties of the superlattices. These measurements confirm that superlattices with a larger period and higher Al composition have higher hole concentration and lower resistivity, as predicted by theory.

Original languageEnglish (US)
Pages (from-to)2108-2110
Number of pages3
JournalApplied Physics Letters
Issue number12
StatePublished - Mar 25 2002

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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