Characteristics of InGaAs/InGaP quantum dot infrared photodetector grown by metal organic chemical vapor deposition

Seongsin Kim; M. Razeghi

Characteristics of InGaAs/InGaP quantum dot infrared photodetector grown by metal organic chemical vapor deposition

Seongsin Kim^*, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

We report physical characteristics of strain induced InGaAs self-assembled quantum dots and device results of quantum dots infrared photodetectors grown on GaAs substrate by LP-MOCVD. InGaAs quantum dots were grown on InGaP matrix which is lattice matched to GaAs substrate in our structure. Different wetting layer thicknesses before forming QDs were directly observed between GaAs and InGaP matrix. The intersubband infrared absorption and photocurrent response was observed from a fabricated quantum dots infrared photodetector structure, which composed of 10 stacks InGaAs/InGaP quantum dot active region. Peak wavelength was observed at 5.5 μm and 10μm respectively, with a peak detectivity of 3.01 × 10⁸ cmHz^1/2/W at 77K. A photon generated carrier lifetime was determined indirectly from a photoconductive gain derived by measuring spectral noise current density. Photoconductive gain as high as 7.6 × 10³ gives us a extended carrier recapture life time of 1.4 ns of quantum dot intersubband transition.

Original language	English (US)
Journal	Materials Research Society Symposium - Proceedings
Volume	642
State	Published - Dec 1 2001
Event	Semiconductor Quantum Dots II - Boston, MA, United States Duration: Nov 27 2000 → Nov 30 2000

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Cite this

@article{636d36f352634f0aa5a24a174b9cbf18,

title = "Characteristics of InGaAs/InGaP quantum dot infrared photodetector grown by metal organic chemical vapor deposition",

abstract = "We report physical characteristics of strain induced InGaAs self-assembled quantum dots and device results of quantum dots infrared photodetectors grown on GaAs substrate by LP-MOCVD. InGaAs quantum dots were grown on InGaP matrix which is lattice matched to GaAs substrate in our structure. Different wetting layer thicknesses before forming QDs were directly observed between GaAs and InGaP matrix. The intersubband infrared absorption and photocurrent response was observed from a fabricated quantum dots infrared photodetector structure, which composed of 10 stacks InGaAs/InGaP quantum dot active region. Peak wavelength was observed at 5.5 μm and 10μm respectively, with a peak detectivity of 3.01 × 108 cmHz1/2/W at 77K. A photon generated carrier lifetime was determined indirectly from a photoconductive gain derived by measuring spectral noise current density. Photoconductive gain as high as 7.6 × 103 gives us a extended carrier recapture life time of 1.4 ns of quantum dot intersubband transition.",

author = "Seongsin Kim and M. Razeghi",

year = "2001",

month = dec,

day = "1",

language = "English (US)",

volume = "642",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Semiconductor Quantum Dots II ; Conference date: 27-11-2000 Through 30-11-2000",

}

TY - JOUR

T1 - Characteristics of InGaAs/InGaP quantum dot infrared photodetector grown by metal organic chemical vapor deposition

AU - Kim, Seongsin

AU - Razeghi, M.

PY - 2001/12/1

Y1 - 2001/12/1

N2 - We report physical characteristics of strain induced InGaAs self-assembled quantum dots and device results of quantum dots infrared photodetectors grown on GaAs substrate by LP-MOCVD. InGaAs quantum dots were grown on InGaP matrix which is lattice matched to GaAs substrate in our structure. Different wetting layer thicknesses before forming QDs were directly observed between GaAs and InGaP matrix. The intersubband infrared absorption and photocurrent response was observed from a fabricated quantum dots infrared photodetector structure, which composed of 10 stacks InGaAs/InGaP quantum dot active region. Peak wavelength was observed at 5.5 μm and 10μm respectively, with a peak detectivity of 3.01 × 108 cmHz1/2/W at 77K. A photon generated carrier lifetime was determined indirectly from a photoconductive gain derived by measuring spectral noise current density. Photoconductive gain as high as 7.6 × 103 gives us a extended carrier recapture life time of 1.4 ns of quantum dot intersubband transition.

AB - We report physical characteristics of strain induced InGaAs self-assembled quantum dots and device results of quantum dots infrared photodetectors grown on GaAs substrate by LP-MOCVD. InGaAs quantum dots were grown on InGaP matrix which is lattice matched to GaAs substrate in our structure. Different wetting layer thicknesses before forming QDs were directly observed between GaAs and InGaP matrix. The intersubband infrared absorption and photocurrent response was observed from a fabricated quantum dots infrared photodetector structure, which composed of 10 stacks InGaAs/InGaP quantum dot active region. Peak wavelength was observed at 5.5 μm and 10μm respectively, with a peak detectivity of 3.01 × 108 cmHz1/2/W at 77K. A photon generated carrier lifetime was determined indirectly from a photoconductive gain derived by measuring spectral noise current density. Photoconductive gain as high as 7.6 × 103 gives us a extended carrier recapture life time of 1.4 ns of quantum dot intersubband transition.

UR - http://www.scopus.com/inward/record.url?scp=0035559705&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035559705&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0035559705

SN - 0272-9172

VL - 642

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Semiconductor Quantum Dots II

Y2 - 27 November 2000 through 30 November 2000

ER -

Characteristics of InGaAs/InGaP quantum dot infrared photodetector grown by metal organic chemical vapor deposition

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this