Characteristics of InGaAs/InGaP quantum dot infrared photodetector grown by metal organic chemical vapor deposition

Seongsin Kim*, M. Razeghi

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

1 Scopus citations


We report physical characteristics of strain induced InGaAs self-assembled quantum dots and device results of quantum dots infrared photodetectors grown on GaAs substrate by LP-MOCVD. InGaAs quantum dots were grown on InGaP matrix which is lattice matched to GaAs substrate in our structure. Different wetting layer thicknesses before forming QDs were directly observed between GaAs and InGaP matrix. The intersubband infrared absorption and photocurrent response was observed from a fabricated quantum dots infrared photodetector structure, which composed of 10 stacks InGaAs/InGaP quantum dot active region. Peak wavelength was observed at 5.5 μm and 10μm respectively, with a peak detectivity of 3.01 × 108 cmHz1/2/W at 77K. A photon generated carrier lifetime was determined indirectly from a photoconductive gain derived by measuring spectral noise current density. Photoconductive gain as high as 7.6 × 103 gives us a extended carrier recapture life time of 1.4 ns of quantum dot intersubband transition.

Original languageEnglish (US)
JournalMaterials Research Society Symposium - Proceedings
StatePublished - Dec 1 2001
EventSemiconductor Quantum Dots II - Boston, MA, United States
Duration: Nov 27 2000Nov 30 2000

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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