Characteristics of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low pressure MOCVD

S. Kim*, M. Erdtmann, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticle

9 Scopus citations

Abstract

We report the first self-assembled InGaAs/InGaP quantum dot intersubband infrared photoconductive detectors (QDIPs) grown on semi-insulating GaAs substrate by low pressure metal organic chemical vapor deposition (MOCVD). The InGaAs quantum dots were constructed on an InGaP matrix as self assembling in Stranski-Krastanow growth mode in optimum growth conditions. The detector structure was prepared for single layer and multi-stacked quantum dots for active region. Normal incident photoconductive response was observed at a peak wavelength of 5.5 μm with a high responsivity of 130 mA/W, and a detectivity of 4.74×107 cm Hz1/2W at 77 K for multi-stack QDIP. Low temperature photoresponse of the single quantum dot photodetector was characterized. Peak response was obtained between 16 K and 60 K. The detailed dark current noise measurements were carried on single and multistack quantum dot infrared detectors. High photoconductive gain as 7.6×103 biased at 0.5 V results in increasing the intersubband carrier relaxation time as two order of magnitude compared quantum well infrared photodetectors.

Original languageEnglish (US)
Pages (from-to)371-380
Number of pages10
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume3629
StatePublished - Jan 1 1999

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Fingerprint Dive into the research topics of 'Characteristics of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low pressure MOCVD'. Together they form a unique fingerprint.

  • Cite this