Characteristics of Zr-based single- and multiple-barrier superconducting tunnel junctions

I. P. Nevirkovets; O. Chernyashevskyy; J. B. Ketterson

doi:10.1063/1.2204454

Characteristics of Zr-based single- and multiple-barrier superconducting tunnel junctions

I. P. Nevirkovets^*, O. Chernyashevskyy, J. B. Ketterson

^*Corresponding author for this work

Physics and Astronomy

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Using Zr oxide for the tunnel barrier formation, it is shown experimentally that the effect of pinholes is suppressed in the double-barrier versus single-barrier junction configuration. It is found that Josephson current in NbZr double-barrier junctions is much lower than in NbAl junctions with comparable specific tunneling resistance and middle layer thickness. Multiple oxidation process is used to improve the quality of superconductor-insulator- superconductor Zr-based junctions.

Original language	English (US)
Article number	212504
Journal	Applied Physics Letters
Volume	88
Issue number	21
DOIs	https://doi.org/10.1063/1.2204454
State	Published - May 21 2006

Funding

This work was supported by the National Science Foundation under Grant No. EIA-0218652 and use was made of facilities operated by the NSF-supported Materials Research Center.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2204454

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title = "Characteristics of Zr-based single- and multiple-barrier superconducting tunnel junctions",

abstract = "Using Zr oxide for the tunnel barrier formation, it is shown experimentally that the effect of pinholes is suppressed in the double-barrier versus single-barrier junction configuration. It is found that Josephson current in NbZr double-barrier junctions is much lower than in NbAl junctions with comparable specific tunneling resistance and middle layer thickness. Multiple oxidation process is used to improve the quality of superconductor-insulator- superconductor Zr-based junctions.",

author = "Nevirkovets, {I. P.} and O. Chernyashevskyy and Ketterson, {J. B.}",

note = "Funding Information: This work was supported by the National Science Foundation under Grant No. EIA-0218652 and use was made of facilities operated by the NSF-supported Materials Research Center. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.",

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AU - Chernyashevskyy, O.

AU - Ketterson, J. B.

N1 - Funding Information: This work was supported by the National Science Foundation under Grant No. EIA-0218652 and use was made of facilities operated by the NSF-supported Materials Research Center. Copyright: Copyright 2011 Elsevier B.V., All rights reserved.

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N2 - Using Zr oxide for the tunnel barrier formation, it is shown experimentally that the effect of pinholes is suppressed in the double-barrier versus single-barrier junction configuration. It is found that Josephson current in NbZr double-barrier junctions is much lower than in NbAl junctions with comparable specific tunneling resistance and middle layer thickness. Multiple oxidation process is used to improve the quality of superconductor-insulator- superconductor Zr-based junctions.

AB - Using Zr oxide for the tunnel barrier formation, it is shown experimentally that the effect of pinholes is suppressed in the double-barrier versus single-barrier junction configuration. It is found that Josephson current in NbZr double-barrier junctions is much lower than in NbAl junctions with comparable specific tunneling resistance and middle layer thickness. Multiple oxidation process is used to improve the quality of superconductor-insulator- superconductor Zr-based junctions.

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Characteristics of Zr-based single- and multiple-barrier superconducting tunnel junctions

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