Abstract
Using Zr oxide for the tunnel barrier formation, it is shown experimentally that the effect of pinholes is suppressed in the double-barrier versus single-barrier junction configuration. It is found that Josephson current in NbZr double-barrier junctions is much lower than in NbAl junctions with comparable specific tunneling resistance and middle layer thickness. Multiple oxidation process is used to improve the quality of superconductor-insulator- superconductor Zr-based junctions.
Original language | English (US) |
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Article number | 212504 |
Journal | Applied Physics Letters |
Volume | 88 |
Issue number | 21 |
DOIs | |
State | Published - May 21 2006 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)