Characterization of CdZnTe co-doped with indium and lead

Yasir Zaman; Wanqi Jie; Tao Wang; Yihui He; Lingyan Xu; Rongrong Guo; Yadong Xu; Gangqiang Zha

doi:10.1016/j.nima.2014.10.010

Characterization of CdZnTe co-doped with indium and lead

Yasir Zaman^*, Wanqi Jie, Tao Wang, Yihui He, Lingyan Xu, Rongrong Guo, Yadong Xu, Gangqiang Zha

^*Corresponding author for this work

Chemistry

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

Indium and lead co-doped Cd_0.9Zn_0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8 × 10¹⁰ Ω cm, and the mobility (μ) of about 868 cm²/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44 × 10^-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

Original language	English (US)
Pages (from-to)	48-51
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume	770
DOIs	https://doi.org/10.1016/j.nima.2014.10.010
State	Published - Jan 11 2015

Funding

This work was financially supported by National Natural science foundation of China with the grant numbers 51372205 , 50902114 and 51202197 .

Keywords

A1 characterization
A1 defects
A1 doping
A2 bridgman technique
B1 cadmium compounds

ASJC Scopus subject areas

Nuclear and High Energy Physics
Instrumentation

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10.1016/j.nima.2014.10.010

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title = "Characterization of CdZnTe co-doped with indium and lead",

abstract = "Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8 × 1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44 × 10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.",

keywords = "A1 characterization, A1 defects, A1 doping, A2 bridgman technique, B1 cadmium compounds",

author = "Yasir Zaman and Wanqi Jie and Tao Wang and Yihui He and Lingyan Xu and Rongrong Guo and Yadong Xu and Gangqiang Zha",

note = "Funding Information: This work was financially supported by National Natural science foundation of China with the grant numbers 51372205 , 50902114 and 51202197 . Publisher Copyright: {\textcopyright} 2014 Elsevier B.V. All rights reserved.",

year = "2015",

month = jan,

day = "11",

doi = "10.1016/j.nima.2014.10.010",

language = "English (US)",

volume = "770",

pages = "48--51",

journal = "Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment",

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TY - JOUR

T1 - Characterization of CdZnTe co-doped with indium and lead

AU - Zaman, Yasir

AU - Jie, Wanqi

AU - Wang, Tao

AU - He, Yihui

AU - Xu, Lingyan

AU - Guo, Rongrong

AU - Xu, Yadong

AU - Zha, Gangqiang

N1 - Funding Information: This work was financially supported by National Natural science foundation of China with the grant numbers 51372205 , 50902114 and 51202197 . Publisher Copyright: © 2014 Elsevier B.V. All rights reserved.

PY - 2015/1/11

Y1 - 2015/1/11

N2 - Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8 × 1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44 × 10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

AB - Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8 × 1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44 × 10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

KW - A1 characterization

KW - A1 defects

KW - A1 doping

KW - A2 bridgman technique

KW - B1 cadmium compounds

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ER -

Characterization of CdZnTe co-doped with indium and lead

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