Characterization of CdZnTe co-doped with indium and lead

Yasir Zaman*, Wanqi Jie, Tao Wang, Yihui He, Lingyan Xu, Rongrong Guo, Yadong Xu, Gangqiang Zha

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

Indium and lead co-doped Cd0.9Zn0.1Te (CZT:(In,Pb)) were characterized by using I-V measurement, thermally stimulated current (TSC) spectroscopy and time-of-flight (TOF). The concentration of doping level of In and Pb was 10 ppm and 2 ppm, respectively. I-V curves showed that CZT:(In,Pb) possessed the resistivity as high as 1.8 × 1010 Ω cm, and the mobility (μ) of about 868 cm2/V s, which is considered acceptable for detector's fabrication. However, the carrier life time (τ) was only 9.44 × 10-7 s. Therefore, the μτ (mobility life time product) value was low. TSC results showed thirteen different trap levels, which were much more than that in Indium doped CZT crystal. Several special traps associated with lead were found, which might be the reason for the low carrier life time.

Original languageEnglish (US)
Pages (from-to)48-51
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume770
DOIs
StatePublished - Jan 11 2015

Keywords

  • A1 characterization
  • A1 defects
  • A1 doping
  • A2 bridgman technique
  • B1 cadmium compounds

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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