Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

J. A. Peters, Z. Liu, J. Im, S. Nguyen, M. Sebastian, A. J. Freeman, M. G. Kanatzidis, B. W. Wessels

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Defect levels in semi-insulating Tl6I4S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059 ± 0.007), (0.13 ± 0.012), (0.31 ± 0.074), (0.39 ± 0.019), (0.62 ± 0.110), and (0.597 ± 0.105). These defect levels are attributed to vacancies (VI, VS) and antisite defects (IS, TlS, TlI) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements.

Original languageEnglish (US)
Article number07530
JournalJournal of Physics D: Applied Physics
Issue number7
StatePublished - Feb 25 2015


  • Deep level defects
  • Radiation detectors

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'Characterization of deep level defects in Tl<sub>6</sub>I<sub>4</sub>S single crystals by photo-induced current transient spectroscopy'. Together they form a unique fingerprint.

Cite this