Characterization of detector-grade CdZnTe:Al crystals obtained by annealing

Pengfei Yu, Yihui He, Tao Wang, Wanqi Jie*

*Corresponding author for this work

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and μτ value of 1.18×10-3 cm2/V had the best detector performance.

Original languageEnglish (US)
Pages (from-to)22-25
Number of pages4
JournalJournal of Crystal Growth
Volume324
Issue number1
DOIs
StatePublished - Jun 1 2011

Keywords

  • A1. Defects
  • A2. Bridgman technique
  • B1. Cadmium compounds
  • B2. Semiconducting IIVI materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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