TY - JOUR
T1 - Characterization of detector-grade CdZnTe:Al crystals obtained by annealing
AU - Yu, Pengfei
AU - He, Yihui
AU - Wang, Tao
AU - Jie, Wanqi
N1 - Funding Information:
This work was supported by the National Natural Science Foundations of China under Grant nos. 50872111 and 50902114 , and also by the 111 Project ( B08040 ).
PY - 2011/6/1
Y1 - 2011/6/1
N2 - Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and μτ value of 1.18×10-3 cm2/V had the best detector performance.
AB - Detector-grade CdZnTe:Al (CZT:Al) crystals were obtained by introducing Te antisites after annealing under Te atmosphere. Characterizations revealed that no inclusions were observed in both the as-grown and the annealed crystals. The resistivity and IR transmittance of annealed CZT:Al crystals were greatly enhanced. Moreover, (D0,X) peak representing the quality of crystal appeared in PL spectrum of annealed crystal. 120 h annealed CZT:Al crystal with the energy resolution of 8.19% and μτ value of 1.18×10-3 cm2/V had the best detector performance.
KW - A1. Defects
KW - A2. Bridgman technique
KW - B1. Cadmium compounds
KW - B2. Semiconducting IIVI materials
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U2 - 10.1016/j.jcrysgro.2011.03.036
DO - 10.1016/j.jcrysgro.2011.03.036
M3 - Article
AN - SCOPUS:79957790579
SN - 0022-0248
VL - 324
SP - 22
EP - 25
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 1
ER -