Characterization of heterojunction laser diodes by near field optical scanning microscopy: layer composition and mode structure analysis

M. S. Unlu; B. B. Goldberg; W. D. Herzog; C. C. Cates; H. F. Ghaemi; D. Sun; E. Towe

Characterization of heterojunction laser diodes by near field optical scanning microscopy: layer composition and mode structure analysis

M. S. Unlu^*, B. B. Goldberg, W. D. Herzog, C. C. Cates, H. F. Ghaemi, D. Sun, E. Towe

^*Corresponding author for this work

Physics and Astronomy

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The superresolution imaging capability of near field scanning optical microscopy (NSOM) is a valuable diagnostic and analytical tool for optoelectronic devices. These devices which this paper has been studied are the early prototypes of lasers grown on (112) GaAs surfaces. The diagnostic result of mode leakage will enable rapid development and optimization of these and other devices. The near field optical beam induced current (NOBIC) results, believed to be the first demonstration of the technique, hold great potential since they demonstrate the capacity to correlate layer composition directly with optical properties.

Original language	English (US)
Title of host publication	IEEE LEOS Annual Meeting - Proceedings
Publisher	IEEE
Pages	209-210
Number of pages	2
Volume	2
State	Published - Dec 1 1994
Event	Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2) - Boston, MA, USA Duration: Oct 31 1994 → Nov 3 1994

Other

Other	Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2)
City	Boston, MA, USA
Period	10/31/94 → 11/3/94

ASJC Scopus subject areas

Engineering(all)

Cite this

@inproceedings{dc9bbc798a0545bd890845ac96090dff,

title = "Characterization of heterojunction laser diodes by near field optical scanning microscopy: layer composition and mode structure analysis",

abstract = "The superresolution imaging capability of near field scanning optical microscopy (NSOM) is a valuable diagnostic and analytical tool for optoelectronic devices. These devices which this paper has been studied are the early prototypes of lasers grown on (112) GaAs surfaces. The diagnostic result of mode leakage will enable rapid development and optimization of these and other devices. The near field optical beam induced current (NOBIC) results, believed to be the first demonstration of the technique, hold great potential since they demonstrate the capacity to correlate layer composition directly with optical properties.",

author = "Unlu, {M. S.} and Goldberg, {B. B.} and Herzog, {W. D.} and Cates, {C. C.} and Ghaemi, {H. F.} and D. Sun and E. Towe",

year = "1994",

month = dec,

day = "1",

language = "English (US)",

volume = "2",

pages = "209--210",

booktitle = "IEEE LEOS Annual Meeting - Proceedings",

publisher = "IEEE",

note = "Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2) ; Conference date: 31-10-1994 Through 03-11-1994",

}

Unlu, MS, Goldberg, BB, Herzog, WD, Cates, CC, Ghaemi, HF, Sun, D & Towe, E 1994, Characterization of heterojunction laser diodes by near field optical scanning microscopy: layer composition and mode structure analysis. in IEEE LEOS Annual Meeting - Proceedings. vol. 2, IEEE, pp. 209-210, Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2), Boston, MA, USA, 10/31/94.

TY - GEN

T1 - Characterization of heterojunction laser diodes by near field optical scanning microscopy

T2 - Proceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2)

AU - Unlu, M. S.

AU - Goldberg, B. B.

AU - Herzog, W. D.

AU - Cates, C. C.

AU - Ghaemi, H. F.

AU - Sun, D.

AU - Towe, E.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The superresolution imaging capability of near field scanning optical microscopy (NSOM) is a valuable diagnostic and analytical tool for optoelectronic devices. These devices which this paper has been studied are the early prototypes of lasers grown on (112) GaAs surfaces. The diagnostic result of mode leakage will enable rapid development and optimization of these and other devices. The near field optical beam induced current (NOBIC) results, believed to be the first demonstration of the technique, hold great potential since they demonstrate the capacity to correlate layer composition directly with optical properties.

AB - The superresolution imaging capability of near field scanning optical microscopy (NSOM) is a valuable diagnostic and analytical tool for optoelectronic devices. These devices which this paper has been studied are the early prototypes of lasers grown on (112) GaAs surfaces. The diagnostic result of mode leakage will enable rapid development and optimization of these and other devices. The near field optical beam induced current (NOBIC) results, believed to be the first demonstration of the technique, hold great potential since they demonstrate the capacity to correlate layer composition directly with optical properties.

UR - http://www.scopus.com/inward/record.url?scp=0028698526&partnerID=8YFLogxK

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M3 - Conference contribution

AN - SCOPUS:0028698526

VL - 2

SP - 209

EP - 210

BT - IEEE LEOS Annual Meeting - Proceedings

PB - IEEE

Y2 - 31 October 1994 through 3 November 1994

ER -

Characterization of heterojunction laser diodes by near field optical scanning microscopy: layer composition and mode structure analysis

Abstract

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