Characterization of heterojunction laser diodes by near field optical scanning microscopy: layer composition and mode structure analysis

M. S. Unlu*, B. B. Goldberg, W. D. Herzog, C. C. Cates, H. F. Ghaemi, D. Sun, E. Towe

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The superresolution imaging capability of near field scanning optical microscopy (NSOM) is a valuable diagnostic and analytical tool for optoelectronic devices. These devices which this paper has been studied are the early prototypes of lasers grown on (112) GaAs surfaces. The diagnostic result of mode leakage will enable rapid development and optimization of these and other devices. The near field optical beam induced current (NOBIC) results, believed to be the first demonstration of the technique, hold great potential since they demonstrate the capacity to correlate layer composition directly with optical properties.

Original languageEnglish (US)
Title of host publicationIEEE LEOS Annual Meeting - Proceedings
PublisherIEEE
Pages209-210
Number of pages2
Volume2
StatePublished - Dec 1 1994
EventProceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2) - Boston, MA, USA
Duration: Oct 31 1994Nov 3 1994

Other

OtherProceedings of the 1994 IEEE LEOS Annual Meeting. Part 1 (of 2)
CityBoston, MA, USA
Period10/31/9411/3/94

ASJC Scopus subject areas

  • General Engineering

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