Characterization of InMnSb epitaxial films for spintronics

L. Lari*, S. Lea, C. Feeser, B. W. Wessels, V. K. Lazarov

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Dilute (III, Mn)V ferromagnetic magnetic semiconductors have potential applications in spintronic devices as magnetic field sensors, spin transistors and reconfigurable logic devices. For such applications ferromagnetism at room temperature is a practical requirement. Previous work has shown that In 1-xMnxSb films grown on GaAs (100) substrates by atmospheric pressure metalorganic vapour phase epitaxy were single phase and had high temperature ferromagnetism for Mn concentrations up to 2%. Here we present a study of InMnSb thin films at higher Mn concentration (10 at%) showing ferromagnetic properties at room temperature. Aberration corrected and analytical (scanning) transmission electron microscopy techniques were used to study the structure and elemental distribution of the In1-xMn xSb/GaAs system. The crystalline quality of the film and the presence of phase separation is evaluated in the context of a cluster-mediated ferromagnetism model.

Original languageEnglish (US)
Article number012032
JournalJournal of Physics: Conference Series
Volume371
DOIs
StatePublished - 2012
EventElectron Microscopy and Analysis Group Conference 2011, EMAG 2011 - Birmingham, United Kingdom
Duration: Sep 6 2011Sep 9 2011

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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