Dilute (III, Mn)V ferromagnetic magnetic semiconductors have potential applications in spintronic devices as magnetic field sensors, spin transistors and reconfigurable logic devices. For such applications ferromagnetism at room temperature is a practical requirement. Previous work has shown that In 1-xMnxSb films grown on GaAs (100) substrates by atmospheric pressure metalorganic vapour phase epitaxy were single phase and had high temperature ferromagnetism for Mn concentrations up to 2%. Here we present a study of InMnSb thin films at higher Mn concentration (10 at%) showing ferromagnetic properties at room temperature. Aberration corrected and analytical (scanning) transmission electron microscopy techniques were used to study the structure and elemental distribution of the In1-xMn xSb/GaAs system. The crystalline quality of the film and the presence of phase separation is evaluated in the context of a cluster-mediated ferromagnetism model.
|Original language||English (US)|
|Journal||Journal of Physics: Conference Series|
|State||Published - 2012|
|Event||Electron Microscopy and Analysis Group Conference 2011, EMAG 2011 - Birmingham, United Kingdom|
Duration: Sep 6 2011 → Sep 9 2011
ASJC Scopus subject areas
- Physics and Astronomy(all)