Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate

Y. H. Choi*, P. T. Staveteig, E. Bigan, Manijeh Razeghi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Optical properties of InTlSb, a new long wavelength infrared material, are investigated. InTlSb/InSb epilayers grown by low-pressure metal-organic chemical vapor deposition on semi-insulating GaAs substrates were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of thallium. Transmission measurements at 77 K indicate an absorption shift from 5.5 μm for InSb up to 8 μm for InTlSb that is confirmed by photoconductivity measurements.

Original languageEnglish (US)
Pages (from-to)3196-3198
Number of pages3
JournalJournal of Applied Physics
Volume75
Issue number6
DOIs
StatePublished - Dec 1 1994

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate'. Together they form a unique fingerprint.

Cite this