Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate

Y. H. Choi; P. T. Staveteig; E. Bigan; M. Razeghi

doi:10.1063/1.356121

Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate

Y. H. Choi^*, P. T. Staveteig, E. Bigan, M. Razeghi

^*Corresponding author for this work

Electrical and Computer Engineering

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Abstract

Optical properties of InTlSb, a new long wavelength infrared material, are investigated. InTlSb/InSb epilayers grown by low-pressure metal-organic chemical vapor deposition on semi-insulating GaAs substrates were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of thallium. Transmission measurements at 77 K indicate an absorption shift from 5.5 μm for InSb up to 8 μm for InTlSb that is confirmed by photoconductivity measurements.

Original language	English (US)
Pages (from-to)	3196-3198
Number of pages	3
Journal	Journal of Applied Physics
Volume	75
Issue number	6
DOIs	https://doi.org/10.1063/1.356121
State	Published - 1994

ASJC Scopus subject areas

General Physics and Astronomy

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@article{cbd3972800514668919b450c1d96bca9,

title = "Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate",

abstract = "Optical properties of InTlSb, a new long wavelength infrared material, are investigated. InTlSb/InSb epilayers grown by low-pressure metal-organic chemical vapor deposition on semi-insulating GaAs substrates were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of thallium. Transmission measurements at 77 K indicate an absorption shift from 5.5 μm for InSb up to 8 μm for InTlSb that is confirmed by photoconductivity measurements.",

author = "Choi, {Y. H.} and Staveteig, {P. T.} and E. Bigan and M. Razeghi",

year = "1994",

doi = "10.1063/1.356121",

language = "English (US)",

volume = "75",

pages = "3196--3198",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "6",

}

TY - JOUR

T1 - Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate

AU - Choi, Y. H.

AU - Staveteig, P. T.

AU - Bigan, E.

AU - Razeghi, M.

PY - 1994

Y1 - 1994

N2 - Optical properties of InTlSb, a new long wavelength infrared material, are investigated. InTlSb/InSb epilayers grown by low-pressure metal-organic chemical vapor deposition on semi-insulating GaAs substrates were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of thallium. Transmission measurements at 77 K indicate an absorption shift from 5.5 μm for InSb up to 8 μm for InTlSb that is confirmed by photoconductivity measurements.

AB - Optical properties of InTlSb, a new long wavelength infrared material, are investigated. InTlSb/InSb epilayers grown by low-pressure metal-organic chemical vapor deposition on semi-insulating GaAs substrates were characterized using Auger electron spectroscopy and Fourier transform infrared spectroscopy. Auger electron spectra confirm the presence of thallium. Transmission measurements at 77 K indicate an absorption shift from 5.5 μm for InSb up to 8 μm for InTlSb that is confirmed by photoconductivity measurements.

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UR - http://www.scopus.com/inward/citedby.url?scp=0006117126&partnerID=8YFLogxK

U2 - 10.1063/1.356121

DO - 10.1063/1.356121

M3 - Article

AN - SCOPUS:0006117126

SN - 0021-8979

VL - 75

SP - 3196

EP - 3198

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 6

ER -

Characterization of InTlSb/InSb grown by low-pressure metal-organic chemical vapor deposition on a GaAs substrate

Abstract

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