Characterization of line edge roughness using CD-SAXS

Ronald L. Jones*, Wen Li Wu, Cheng Qing Wang, Eric K. Lin, Kwang Woo Choi, Bryan J. Rice, George M. Thompson, Steven J. Weigand, Denis T. Keane

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Scopus citations


We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.

Original languageEnglish (US)
Title of host publicationMetrology, Inspection, and Process Control for Microlithography XX
StatePublished - 2006
EventMetrology, Inspection, and Process Control for Microlithography XX - San Jose, CA, United States
Duration: Jan 20 2006Jan 23 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6152 I
ISSN (Print)0277-786X


OtherMetrology, Inspection, and Process Control for Microlithography XX
Country/TerritoryUnited States
CitySan Jose, CA


  • Critical Dimension Metrology
  • Extreme Ultraviolet Lithography
  • Line Edge Roughness
  • Scatterometry

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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