Characterization of line edge roughness using CD-SAXS

Ronald L. Jones; Wen Li Wu; Cheng Qing Wang; Eric K. Lin; Kwang Woo Choi; Bryan J. Rice; George M. Thompson; Steven J. Weigand; Denis T. Keane

doi:10.1117/12.656829

Characterization of line edge roughness using CD-SAXS

Ronald L. Jones^*, Wen Li Wu, Cheng Qing Wang, Eric K. Lin, Kwang Woo Choi, Bryan J. Rice, George M. Thompson, Steven J. Weigand, Denis T. Keane

^*Corresponding author for this work

Office for Research

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

10 Scopus citations

Abstract

We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.

Original language	English (US)
Title of host publication	Metrology, Inspection, and Process Control for Microlithography XX
DOIs	https://doi.org/10.1117/12.656829
State	Published - 2006
Event	Metrology, Inspection, and Process Control for Microlithography XX - San Jose, CA, United States Duration: Jan 20 2006 → Jan 23 2006

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6152 I
ISSN (Print)	0277-786X

Other

Other	Metrology, Inspection, and Process Control for Microlithography XX
Country/Territory	United States
City	San Jose, CA
Period	1/20/06 → 1/23/06

Keywords

Critical Dimension Metrology
Extreme Ultraviolet Lithography
Line Edge Roughness
Scatterometry

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.656829

Cite this

Jones, R. L., Wu, W. L., Wang, C. Q., Lin, E. K., Choi, K. W., Rice, B. J., Thompson, G. M., Weigand, S. J., & Keane, D. T. (2006). Characterization of line edge roughness using CD-SAXS. In Metrology, Inspection, and Process Control for Microlithography XX Article 61520N (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6152 I). https://doi.org/10.1117/12.656829

@inproceedings{bf7425c8a6994adc9906fa3a055f5847,

title = "Characterization of line edge roughness using CD-SAXS",

abstract = "We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.",

keywords = "Critical Dimension Metrology, Extreme Ultraviolet Lithography, Line Edge Roughness, Scatterometry",

author = "Jones, {Ronald L.} and Wu, {Wen Li} and Wang, {Cheng Qing} and Lin, {Eric K.} and Choi, {Kwang Woo} and Rice, {Bryan J.} and Thompson, {George M.} and Weigand, {Steven J.} and Keane, {Denis T.}",

year = "2006",

doi = "10.1117/12.656829",

language = "English (US)",

isbn = "0819461954",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

booktitle = "Metrology, Inspection, and Process Control for Microlithography XX",

note = "Metrology, Inspection, and Process Control for Microlithography XX ; Conference date: 20-01-2006 Through 23-01-2006",

}

Jones, RL, Wu, WL, Wang, CQ, Lin, EK, Choi, KW, Rice, BJ, Thompson, GM, Weigand, SJ & Keane, DT 2006, Characterization of line edge roughness using CD-SAXS. in Metrology, Inspection, and Process Control for Microlithography XX., 61520N, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6152 I, Metrology, Inspection, and Process Control for Microlithography XX, San Jose, CA, United States, 1/20/06. https://doi.org/10.1117/12.656829

TY - GEN

T1 - Characterization of line edge roughness using CD-SAXS

AU - Jones, Ronald L.

AU - Wu, Wen Li

AU - Wang, Cheng Qing

AU - Lin, Eric K.

AU - Choi, Kwang Woo

AU - Rice, Bryan J.

AU - Thompson, George M.

AU - Weigand, Steven J.

AU - Keane, Denis T.

PY - 2006

Y1 - 2006

N2 - We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.

AB - We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.

KW - Critical Dimension Metrology

KW - Extreme Ultraviolet Lithography

KW - Line Edge Roughness

KW - Scatterometry

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DO - 10.1117/12.656829

M3 - Conference contribution

AN - SCOPUS:33745597576

SN - 0819461954

SN - 9780819461957

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Metrology, Inspection, and Process Control for Microlithography XX

T2 - Metrology, Inspection, and Process Control for Microlithography XX

Y2 - 20 January 2006 through 23 January 2006

ER -

Characterization of line edge roughness using CD-SAXS

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