Abstract
We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.
Original language | English (US) |
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Title of host publication | Metrology, Inspection, and Process Control for Microlithography XX |
Volume | 6152 I |
DOIs | |
State | Published - Jul 10 2006 |
Event | Metrology, Inspection, and Process Control for Microlithography XX - San Jose, CA, United States Duration: Jan 20 2006 → Jan 23 2006 |
Other
Other | Metrology, Inspection, and Process Control for Microlithography XX |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/20/06 → 1/23/06 |
Keywords
- Critical Dimension Metrology
- Extreme Ultraviolet Lithography
- Line Edge Roughness
- Scatterometry
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering