Characterization of line edge roughness using CD-SAXS

Ronald L. Jones; Wen Li Wu; Cheng Qing Wang; Eric K. Lin; Kwang Woo Choi; Bryan J. Rice; George M. Thompson; Steven J. Weigand; Denis T. Keane

doi:10.1117/12.656829

Characterization of line edge roughness using CD-SAXS

Ronald L. Jones^*, Wen Li Wu, Cheng Qing Wang, Eric K. Lin, Kwang Woo Choi, Bryan J. Rice, George M. Thompson, Steven J. Weigand, Denis T. Keane

^*Corresponding author for this work

NRSC - Northwestern Synchrotron Research Center - DND CAT

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

8 Scopus citations

Abstract

We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.

Original language	English (US)
Title of host publication	Metrology, Inspection, and Process Control for Microlithography XX
Volume	6152 I
DOIs	https://doi.org/10.1117/12.656829
State	Published - Jul 10 2006
Event	Metrology, Inspection, and Process Control for Microlithography XX - San Jose, CA, United States Duration: Jan 20 2006 → Jan 23 2006

Other

Other	Metrology, Inspection, and Process Control for Microlithography XX
Country	United States
City	San Jose, CA
Period	1/20/06 → 1/23/06

Keywords

Critical Dimension Metrology
Extreme Ultraviolet Lithography
Line Edge Roughness
Scatterometry

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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title = "Characterization of line edge roughness using CD-SAXS",

abstract = "We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.",

keywords = "Critical Dimension Metrology, Extreme Ultraviolet Lithography, Line Edge Roughness, Scatterometry",

author = "Jones, {Ronald L.} and Wu, {Wen Li} and Wang, {Cheng Qing} and Lin, {Eric K.} and Choi, {Kwang Woo} and Rice, {Bryan J.} and Thompson, {George M.} and Weigand, {Steven J.} and Keane, {Denis T.}",

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month = jul,

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doi = "10.1117/12.656829",

language = "English (US)",

isbn = "0819461954",

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booktitle = "Metrology, Inspection, and Process Control for Microlithography XX",

note = "Metrology, Inspection, and Process Control for Microlithography XX ; Conference date: 20-01-2006 Through 23-01-2006",

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Jones, RL, Wu, WL, Wang, CQ, Lin, EK, Choi, KW, Rice, BJ, Thompson, GM, Weigand, SJ & Keane, DT 2006, Characterization of line edge roughness using CD-SAXS. in Metrology, Inspection, and Process Control for Microlithography XX. vol. 6152 I, 61520N, Metrology, Inspection, and Process Control for Microlithography XX, San Jose, CA, United States, 1/20/06. https://doi.org/10.1117/12.656829

Characterization of line edge roughness using CD-SAXS. / Jones, Ronald L.; Wu, Wen Li; Wang, Cheng Qing; Lin, Eric K.; Choi, Kwang Woo; Rice, Bryan J.; Thompson, George M.; Weigand, Steven J.; Keane, Denis T.

Metrology, Inspection, and Process Control for Microlithography XX. Vol. 6152 I 2006. 61520N.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Characterization of line edge roughness using CD-SAXS

AU - Jones, Ronald L.

AU - Wu, Wen Li

AU - Wang, Cheng Qing

AU - Lin, Eric K.

AU - Choi, Kwang Woo

AU - Rice, Bryan J.

AU - Thompson, George M.

AU - Weigand, Steven J.

AU - Keane, Denis T.

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N2 - We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.

AB - We are developing a transmission X-ray scattering platform capable of measuring the average cross section and line edge roughness in patterns ranging from 10 nm to 500 nm in width with sub-nm precision. Critical Dimension Small Angle X-ray Scattering (CD-SAXS) measures the diffraction of a collimated X-ray beam with sub-Angstrom wavelength from a repeating pattern, such as those in light scatterometry targets, to determine the pattern periodicity, line width, line height, and sidewall angle. Here, we present results from CD-SAXS with an emphasis on line edge roughness characterization. Line edge roughness measurements from CD-SAXS are compared with top-down scanning electron microscopy values and comparative definitions are discussed.

KW - Critical Dimension Metrology

KW - Extreme Ultraviolet Lithography

KW - Line Edge Roughness

KW - Scatterometry

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