Characterization of materials and devices by near-field scanning optical microscopy

B. B. Goldberg*, H. F. Ghaemi, M. S. Unlu, W. D. Herzog

*Corresponding author for this work

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

The local spectroscopic characteristics of a wide variety of material systems, from quantum dots and wires, to ordered GaInP, to heterojunctions and optoelectronic devices have been studied using both room and low-temperature near field scanning optical microscopy (NSOM). Spectral emission maps of a set of samples of GaInP epilayers with varying degrees of ordering were studied using low temperature near-field photoluminescence spectroscopy. The samples exhibit two peaks, a low energy (LE) and a high energy (HE) peak. The data obtained are inconsistent with expectations that the LE peak is due to emission from domain boundaries. Additionally, alternative models are discussed.

Original languageEnglish (US)
Pages (from-to)171-182
Number of pages12
JournalMaterials Research Society Symposium - Proceedings
Volume406
StatePublished - Jan 1 1996
EventProceedings of the 1995 MRS Fall Symposium - Boston, MA, USA
Duration: Nov 27 1995Nov 30 1995

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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