Epitaxial layers of InAsxP1-x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAsxP1-x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0-0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)