Characterization of Mn-doped InAsxP1-x grown by organometallic vapor phase epitaxy

K. Huang; B. W. Wessels

doi:10.1063/1.99190

Characterization of Mn-doped InAs_xP_1-x grown by organometallic vapor phase epitaxy

K. Huang^*, B. W. Wessels

^*Corresponding author for this work

MRC - Materials Research Center

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Epitaxial layers of InAs_xP_1-x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAs_xP_1-x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0-0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.

Original language	English (US)
Pages (from-to)	1155-1157
Number of pages	3
Journal	Applied Physics Letters
Volume	52
Issue number	14
DOIs	https://doi.org/10.1063/1.99190
State	Published - 1988

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.99190

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title = "Characterization of Mn-doped InAsxP1-x grown by organometallic vapor phase epitaxy",

abstract = "Epitaxial layers of InAsxP1-x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAsxP1-x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0-0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.",

author = "K. Huang and Wessels, {B. W.}",

year = "1988",

doi = "10.1063/1.99190",

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publisher = "American Institute of Physics",

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T1 - Characterization of Mn-doped InAsxP1-x grown by organometallic vapor phase epitaxy

AU - Huang, K.

AU - Wessels, B. W.

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N2 - Epitaxial layers of InAsxP1-x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAsxP1-x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0-0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.

AB - Epitaxial layers of InAsxP1-x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAsxP1-x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0-0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.

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Characterization of Mn-doped InAs_xP_1-x grown by organometallic vapor phase epitaxy

Abstract

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