Characterization of Mn-doped InAsxP1-x grown by organometallic vapor phase epitaxy

K. Huang*, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

16 Scopus citations


Epitaxial layers of InAsxP1-x:Mn are grown by organometallic vapor phase epitaxy on (100) oriented InP substrates. The InAsxP1-x layers are deliberately doped with Mn from the vapor phase. Photoluminescent properties are studied as a function of alloy composition for x=0-0.52. Experimental data indicate that the manganese acceptor level is pinned to the vacuum level for the range of alloy compositions studied.

Original languageEnglish (US)
Pages (from-to)1155-1157
Number of pages3
JournalApplied Physics Letters
Issue number14
StatePublished - 1988

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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