Characterization of new materials in a four-sample thermoelectric measurement system

N. A. Ghelani*, S. Y. Loo, D. Y. Chung, S. Sportouch, S. De Nardi, M. G. Kanatzidis, T. P. Hogan, G. S. Nolas

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review

Abstract

Several new materials in the CsBi4Te6, A2Bi8Se13, (A = K, Rb, Cs), HoNiSb, Ba/Ge/B (B = In, Sn), and AgPbBiQ3 (Q = S, Se, Te) systems have shown promising characteristics for thermoelectric applications. New synthesis techniques are able to produce samples at much higher rates than previously possible. This has led to a persistent challenge in thermoelectric materials research of rapid and comprehensive characterization of samples. This paper presents a description of a new 4-sample transport measurement system and the related measurement techniques. Special features of the system include fully computer-controlled operation (implemented in Lab ViewTM) for simultaneous measurement of electrical conductivity, thermo-electric power, and thermal conductivity. This system has been successfully used to characterize several new thermoelectric materials (including some of the above-mentioned compounds) and reference materials exhibiting a wide range of thermal conductivities.

Original languageEnglish (US)
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume4
StatePublished - Jan 1 2001
EventIEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia
Duration: May 6 2001May 9 2001

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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