Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy

N. P. Guisinger; R. Basu; M. E. Greene; A. S. Baluch; Mark Hersam

doi:10.1109/DRC.2004.1367861

Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy

N. P. Guisinger^*, R. Basu, M. E. Greene, A. S. Baluch, Mark Hersam

^*Corresponding author for this work

Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.

Original language	English (US)
Title of host publication	Device Research Conference - Conference Digest, 62nd DRC
Pages	195-197
Number of pages	3
DOIs	https://doi.org/10.1109/DRC.2004.1367861
State	Published - Dec 1 2004
Event	Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004

Other

Other	Device Research Conference - Conference Digest, 62nd DRC
Country	United States
City	Notre Dame, IN
Period	6/21/04 → 6/23/04

ASJC Scopus subject areas

Engineering(all)

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10.1109/DRC.2004.1367861

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title = "Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy",

abstract = "The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.",

author = "Guisinger, {N. P.} and R. Basu and Greene, {M. E.} and Baluch, {A. S.} and Mark Hersam",

year = "2004",

month = dec,

day = "1",

doi = "10.1109/DRC.2004.1367861",

language = "English (US)",

isbn = "0780382846",

pages = "195--197",

booktitle = "Device Research Conference - Conference Digest, 62nd DRC",

note = "Device Research Conference - Conference Digest, 62nd DRC ; Conference date: 21-06-2004 Through 23-06-2004",

}

Guisinger, NP, Basu, R, Greene, ME, Baluch, AS & Hersam, M 2004, Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy. in Device Research Conference - Conference Digest, 62nd DRC., VI.A.-1, pp. 195-197, Device Research Conference - Conference Digest, 62nd DRC, Notre Dame, IN, United States, 6/21/04. https://doi.org/10.1109/DRC.2004.1367861

TY - GEN

T1 - Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy

AU - Guisinger, N. P.

AU - Basu, R.

AU - Greene, M. E.

AU - Baluch, A. S.

AU - Hersam, Mark

PY - 2004/12/1

Y1 - 2004/12/1

N2 - The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.

AB - The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.

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U2 - 10.1109/DRC.2004.1367861

DO - 10.1109/DRC.2004.1367861

M3 - Conference contribution

AN - SCOPUS:18044385158

SN - 0780382846

SP - 195

EP - 197

BT - Device Research Conference - Conference Digest, 62nd DRC

T2 - Device Research Conference - Conference Digest, 62nd DRC

Y2 - 21 June 2004 through 23 June 2004

ER -

Characterization of silicon-based molecular resonant tunneling diodes with scanning tunneling microscopy

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