Abstract
The silicon-based molecular resonant tunneling diodes were characterized using scanning tunneling microscopy (STM). The STM current-voltage characteristics on individual molecules mounted on degenerately n-type Si(100) showed multiple negative differential resistance (NDR) events at negative sample bias. When the Si(100) substrate bias is changed to degenerate p-type doping, multiple NDR events were observed at positive sample bias, while the discontinuities in the differential conductance occurred at negative sample bias. The results suggested that this effect can be attributed to the broadening of molecular energy levels through intermolecular interactions or concurrent tunneling paths through multiple molecules.
Original language | English (US) |
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Title of host publication | Device Research Conference - Conference Digest, 62nd DRC |
Pages | 195-197 |
Number of pages | 3 |
DOIs | |
State | Published - Dec 1 2004 |
Event | Device Research Conference - Conference Digest, 62nd DRC - Notre Dame, IN, United States Duration: Jun 21 2004 → Jun 23 2004 |
Other
Other | Device Research Conference - Conference Digest, 62nd DRC |
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Country/Territory | United States |
City | Notre Dame, IN |
Period | 6/21/04 → 6/23/04 |
ASJC Scopus subject areas
- Engineering(all)