Characterization of thallium-based ternary semiconductor compounds for radiation detection

Zhifu Liu, John A. Peters, Sandy Nguyen, Maria Sebastian, Bruce W. Wessels*, Shichao Wang, Hosub Jin, Jino Im, Arthur J. Freeman, Mercouri G. Kanatzidis

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Scopus citations

Abstract

We report on the characterization of optical and electronic properties of a series of thallium chalcogenide, wide gap ternary semiconductor compounds including Tl6I4Se, Tl6I4S, Tl 3SbS3, Tl2SnS3, and Tl 7Bi3I16 for ionized radiation detection at the x-ray and γ ray regimes. The semiconductor crystals were grown by the modified Bridgman method. The optical absorption, band gap, mobility-lifetime products for electron and hole carriers were measured at room temperature. For Tl6I4S and Tl6I4Se the mobility-lifetime products are comparable to those of CdZnTe. We measured room temperature detector response to x-ray and γ ray sources. For 137Cs radiation, Tl6I4Se has a well-resolved spectral response comparable to that of CdZnTe.

Original languageEnglish (US)
Title of host publicationHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
DOIs
StatePublished - 2012
EventHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV - San Diego, CA, United States
Duration: Aug 13 2012Aug 15 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8507
ISSN (Print)0277-786X

Other

OtherHard X-Ray, Gamma-Ray, and Neutron Detector Physics XIV
Country/TerritoryUnited States
CitySan Diego, CA
Period8/13/128/15/12

Keywords

  • Photoconductivity
  • Tl-chalcogenide
  • Wide gap semiconductor
  • X-ray detector

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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