Characterization of the α-Sn/CdTe(110) interface by angle-resolved X-ray photoemission

Tzer Shen Lin; William J. Partin; Gregg M. Damminga; Thomas M. Parrill; Won Jong Lee; Yip Wah Chung

doi:10.1016/S0039-6028(87)80338-2

Characterization of the α-Sn/CdTe(110) interface by angle-resolved X-ray photoemission

Tzer Shen Lin^*, William J. Partin, Gregg M. Damminga, Thomas M. Parrill, Won Jong Lee, Yip Wah Chung

^*Corresponding author for this work

Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Stoichiometric and atomically clean CdTe(110) surfaces have been prepared by suitable chemical etching, followed by argon sputtering, and sample annealing in ultrahigh vacuum. Cubic α-tin was grown on CdTe(110) by tin evaporation from a tungsten filament at a substrate temperature of 30°C. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) was used to determine the composition profile of this semiconductor heterostructure nondestructively. In this technique, the angular variations of photoemitted electrons from the substrate and the overlayer are related to the composition profile within the XPS sampling depth. The actual composition profile is obtained by applying the simplex optimization algorithm on the ARXPS data. From our analyses, we conclude that α-Sn grown at 30°C forms an abrupt junction with CdTe(110).

Original language	English (US)
Pages (from-to)	113-122
Number of pages	10
Journal	Surface Science
Volume	183
Issue number	1-2
DOIs	https://doi.org/10.1016/S0039-6028(87)80338-2
State	Published - Apr 2 1987

Funding

This work is supported by the Department of Energy, Division of Materials Sciences under grant No. DE-FG02-85ER45216. Gregg M. Damminga was supported by a Walter P, Murphy Fellowship, and Thomas M. Parrill was supported by an ONR-ASEE Fellowship.

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0039-6028(87)80338-2

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title = "Characterization of the α-Sn/CdTe(110) interface by angle-resolved X-ray photoemission",

abstract = "Stoichiometric and atomically clean CdTe(110) surfaces have been prepared by suitable chemical etching, followed by argon sputtering, and sample annealing in ultrahigh vacuum. Cubic α-tin was grown on CdTe(110) by tin evaporation from a tungsten filament at a substrate temperature of 30°C. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) was used to determine the composition profile of this semiconductor heterostructure nondestructively. In this technique, the angular variations of photoemitted electrons from the substrate and the overlayer are related to the composition profile within the XPS sampling depth. The actual composition profile is obtained by applying the simplex optimization algorithm on the ARXPS data. From our analyses, we conclude that α-Sn grown at 30°C forms an abrupt junction with CdTe(110).",

author = "Lin, {Tzer Shen} and Partin, {William J.} and Damminga, {Gregg M.} and Parrill, {Thomas M.} and Lee, {Won Jong} and Chung, {Yip Wah}",

note = "Funding Information: This work is supported by the Department of Energy, Division of Materials Sciences under grant No. DE-FG02-85ER45216. Gregg M. Damminga was supported by a Walter P, Murphy Fellowship, and Thomas M. Parrill was supported by an ONR-ASEE Fellowship.",

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doi = "10.1016/S0039-6028(87)80338-2",

language = "English (US)",

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T1 - Characterization of the α-Sn/CdTe(110) interface by angle-resolved X-ray photoemission

AU - Lin, Tzer Shen

AU - Partin, William J.

AU - Damminga, Gregg M.

AU - Parrill, Thomas M.

AU - Lee, Won Jong

AU - Chung, Yip Wah

N1 - Funding Information: This work is supported by the Department of Energy, Division of Materials Sciences under grant No. DE-FG02-85ER45216. Gregg M. Damminga was supported by a Walter P, Murphy Fellowship, and Thomas M. Parrill was supported by an ONR-ASEE Fellowship.

PY - 1987/4/2

Y1 - 1987/4/2

N2 - Stoichiometric and atomically clean CdTe(110) surfaces have been prepared by suitable chemical etching, followed by argon sputtering, and sample annealing in ultrahigh vacuum. Cubic α-tin was grown on CdTe(110) by tin evaporation from a tungsten filament at a substrate temperature of 30°C. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) was used to determine the composition profile of this semiconductor heterostructure nondestructively. In this technique, the angular variations of photoemitted electrons from the substrate and the overlayer are related to the composition profile within the XPS sampling depth. The actual composition profile is obtained by applying the simplex optimization algorithm on the ARXPS data. From our analyses, we conclude that α-Sn grown at 30°C forms an abrupt junction with CdTe(110).

AB - Stoichiometric and atomically clean CdTe(110) surfaces have been prepared by suitable chemical etching, followed by argon sputtering, and sample annealing in ultrahigh vacuum. Cubic α-tin was grown on CdTe(110) by tin evaporation from a tungsten filament at a substrate temperature of 30°C. Angle-resolved X-ray photoelectron spectroscopy (ARXPS) was used to determine the composition profile of this semiconductor heterostructure nondestructively. In this technique, the angular variations of photoemitted electrons from the substrate and the overlayer are related to the composition profile within the XPS sampling depth. The actual composition profile is obtained by applying the simplex optimization algorithm on the ARXPS data. From our analyses, we conclude that α-Sn grown at 30°C forms an abrupt junction with CdTe(110).

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JO - Surface Science

JF - Surface Science

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ER -

Characterization of the α-Sn/CdTe(110) interface by angle-resolved X-ray photoemission

Abstract

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ASJC Scopus subject areas

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