INIS
transport
100%
sand
85%
layers
71%
dielectrics
71%
thin films
42%
performance
42%
voltage
42%
leakage current
42%
metals
28%
surfaces
28%
films
28%
devices
28%
barriers
28%
transistors
28%
silicon oxides
28%
tunneling
28%
temperature range
14%
blocking
14%
substrates
14%
electrons
14%
charges
14%
electrodes
14%
switches
14%
breakdown
14%
dielectric constant
14%
passivation
14%
capacitance
14%
current (leakage)
14%
Engineering
Gate Dielectric
57%
Thin-Film Transistor
57%
Surface Passivation
57%
Temperature
42%
Performance
28%
Electric Potential
14%
Provide Insight
14%
Capacitance
14%
Monolayer
14%
Realization
14%
Self-Assembled Monolayers
14%
Thin Films
14%
Substrate Surface
14%
Temperature Range
14%
Performance Improvement
14%
Organosilane
14%
High Dielectric Constant
14%
Applied Voltage
14%
Limiting Factor
14%
Operating Voltage
14%
Barrier Function
14%
Characteristics
14%
Properties
14%
Mechanisms
14%
Chemistry
Leakage Current
57%
Reaction Temperature
42%
Tunneling
28%
Metal
28%
Device
28%
Electron Particle
14%
Voltage
14%
Self Assembled Monolayer
14%
Monolayer
14%
Dielectric Material
14%
Liquid Film
14%
Structure
14%
Physics
Temperature
42%
Performance
28%
Alternatives
28%
Metal
28%
Electrodes
14%
Thin Films
14%
Electric Potential
14%
Dielectrics
14%
Capacitance
14%
Thick Films
14%
Shapes
14%
Regimes
14%
Position (Location)
14%
Material Science
Multilayers
42%
Thin Films
14%
Self Assembled Monolayer
14%
Dielectric Material
14%
Monolayers
14%
Thick Films
14%
Liquid Films
14%
Material
14%
Switch
14%
Chemical Engineering
Conjugated System
57%
Temperature
42%