@inproceedings{604021ee0b264c6d8a0b18b2c954f39c,
title = "Charge confining mechanisms in III-V semiconductor nanowire",
abstract = "III-V semiconductor nanowires exhibit unique features for application in novel optoelectronic devices. Due to their large surface-to-volume ratio, the realization of heterostructures beyond the capabilities of planar growth, that can still be integrated in Si-based electronics, becomes possible. Furthermore, polytypism was observed e.g. in GaAs nanowires such that different crystal phases coexist in the same nanowire. As different crystal phases have different electronic properties, this feature can be exploited to form crystal-phase heterostructures with atomically flat interfaces and only very small elastic deformation. We will discuss the specifics of electronic-structure simulations in such nanowires and present recent example studies.",
author = "Oliver Marquardt and P. Corfdir and J. Lahnemann and M. Ramsteiner and O. Brandt and L. Geelhaar and Hill, {M. O.} and Lauhon, {L. J.} and Hassan, {A. Al} and U. Pietsch",
note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019 ; Conference date: 08-07-2019 Through 12-07-2019",
year = "2019",
month = jul,
doi = "10.1109/NUSOD.2019.8806977",
language = "English (US)",
series = "Proceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD",
publisher = "IEEE Computer Society",
pages = "19--20",
editor = "Karin Hinzer and Joachim Piprek",
booktitle = "19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019",
address = "United States",
}