Charge confining mechanisms in III-V semiconductor nanowire

Oliver Marquardt, P. Corfdir, J. Lahnemann, M. Ramsteiner, O. Brandt, L. Geelhaar, M. O. Hill, L. J. Lauhon, A. Al Hassan, U. Pietsch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

III-V semiconductor nanowires exhibit unique features for application in novel optoelectronic devices. Due to their large surface-to-volume ratio, the realization of heterostructures beyond the capabilities of planar growth, that can still be integrated in Si-based electronics, becomes possible. Furthermore, polytypism was observed e.g. in GaAs nanowires such that different crystal phases coexist in the same nanowire. As different crystal phases have different electronic properties, this feature can be exploited to form crystal-phase heterostructures with atomically flat interfaces and only very small elastic deformation. We will discuss the specifics of electronic-structure simulations in such nanowires and present recent example studies.

Original languageEnglish (US)
Title of host publication19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019
EditorsKarin Hinzer, Joachim Piprek
PublisherIEEE Computer Society
Pages19-20
Number of pages2
ISBN (Electronic)9781728116471
DOIs
StatePublished - Jul 2019
Event19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019 - Ottawa, Canada
Duration: Jul 8 2019Jul 12 2019

Publication series

NameProceedings of the International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD
Volume2019-July
ISSN (Print)2158-3234

Conference

Conference19th International Conference on Numerical Simulation of Optoelectronic Devices, NUSOD 2019
CountryCanada
CityOttawa
Period7/8/197/12/19

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Modeling and Simulation

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