Charge Transport in Magnetic Semiconductor p-n Heterojunctions

Jindong Liu, John A. Peters, Nikhil Rangaraju, Bruce W Wessels

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Previously, the p-n-p bipolar magnetic junction transistor was demonstrated using a magnetic semiconductor InMnAs as the collector. A current gain βdc as high as 20 of the transistor is observed at 300 K. A negative magnetoamplification of-150% is obtained when the applied magnetic field is 8 T. In order to assess the gain mechanism for such transistors, we measured the minority carrier lifetime in a p-n InMnAs/InAs heterojunction diode. A minority carrier lifetime of 320 ns was obtained at room temperature. For the p-n-p MJT, a decrease in the emitter injection efficiency with the magnetic field is observed for the various base currents, which is attributed to the positive magnetoresistance of the p-type InMnAs. The emitter injection efficiency decreases with the magnetic field leading to the observed negative magnetic amplification.

Original languageEnglish (US)
Article number7163692
Pages (from-to)2470-2474
Number of pages5
JournalIEEE Transactions on Electron Devices
Issue number8
StatePublished - Aug 1 2015


  • Bipolar magnetic junction transistors (MJTs)
  • charge transport
  • lifetime
  • magnetic semiconductors
  • p-n heterojunctions
  • spintronics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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