Abstract
The performance of semiconductor/liquid junction devices is critically dependent on the nature of the semiconductor surface. The presence of electronically active defect states can modify the current-voltage characteristics of the junctions, thereby reducing conversion efficiency. Moreover, trapping states associated with an interfacial oxide layer can have a deleterious effect on junction performance. The purpose of this study was to investigate charge transport at unmodified p-InP liquid junctions and determine interface state parameters. The properties of the interfacial defect states were studied by measuring the capacitance-voltage characteristics under illumination. The flat band voltage was found to shift for both sub-bandgap and bandgap illumination. This shift can be attributed to the trapping of photogenerated electrons at the surface. The detailed energetics of the trap responsible for the flat-band voltage shift was studied using photocapacitance (phcap) spectroscopy on the liquid junctions.
| Original language | English (US) |
|---|---|
| Number of pages | 1 |
| Journal | Electrochemical Society Extended Abstracts |
| Volume | 85-2 |
| State | Published - Dec 1 1985 |
ASJC Scopus subject areas
- Engineering(all)