Charge-Trap Flash-Memory Oxide Transistors Enabled by Copper-Zirconia Composites

Kang Jun Baeg, Myung Gil Kim, Charles K. Song, Xinge Yu, Antonio Facchetti*, Tobin J. Marks

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

24 Scopus citations


A solution-processed electrochemical charge-trap flash memory element is based on a solid solution of copper and zirconium oxides (Cu-ZrO2) as a charge-trapping layer. Because of the facile reduction of Cu2+ to Cu1+, Cu-ZrO2 thin films are especially effective in memory devices based on thin-film transistors when the devices are fabricated from combustion-processed metal-oxide semiconductors (In2O3 and an indium-gallium oxide).

Original languageEnglish (US)
Pages (from-to)7170-7177
Number of pages8
JournalAdvanced Materials
Issue number42
StatePublished - Nov 1 2014


  • amorphous oxides
  • data storage
  • dielectrics
  • self-assembly
  • semiconductors
  • thin films

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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