Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO

K. Pantzas*, D. J. Rogers, P. Bove, V. E. Sandana, F. H. Teherani, Y. El Gmili, M. Molinari, G. Patriarche, L. Largeau, O. Mauguin, S. Suresh, P. L. Voss, M. Razeghi, A. Ougazzaden

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5 at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscoy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process.

Original languageEnglish (US)
Pages (from-to)105-109
Number of pages5
JournalJournal of Crystal Growth
Volume435
DOIs
StatePublished - Feb 1 2016

Keywords

  • A1. Characterization
  • A3. Metalorganic vapor phase epitaxy
  • B1. Nitrides
  • B1. Zinc compounds
  • B3. Solar cells

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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