Chemical vapor deposition of monolayer MoS₂ directly on ultrathin Al₂O₃ for low-power electronics

Keyphrases

• Chemical Vapor Deposition 100%
• Aluminum Oxide 100%
• Ultrathin 100%
• Low-power Electronics 100%
• Monolayer MoS2 100%
• Molybdenite 60%
• Atomic Layer Deposition 40%
• Field-effect Transistors 40%
• High Temperature 20%
• Dielectric 20%
• Low Temperature 20%
• Spectroscopic Techniques 20%
• Power Consumption 20%
• Microscopic Techniques 20%
• Gate Dielectric 20%
• High-performance Electronics 20%
• Gate Voltage 20%
• Hysteresis 20%
• Complementary Circuits 20%
• Threshold Voltage 20%
• High-k Dielectric 20%
• Subthreshold Swing 20%
• Enhancement-mode (E-mode) 20%
• ION-IOFF 20%
• Transfer-free 20%
• Low Power Applications 20%
• Mode Field 20%
• Low-power Devices 20%
• Electronic Figure of Merit 20%

Material Science

• Monolayers 100%
• Chemical Vapor Deposition 100%
• Aluminum Oxide 100%
• Dielectric Material 60%
• Field Effect Transistors 40%
• Electronic Circuit 20%
• Power Device 20%