Chromatic aberration correction of silicon aplanatic solid immersion lens for photon emission microscopy of integrated circuits

A. Yurt*, E. Ramsay, F. H. Köklü, M. S. Ünlü, B. B. Goldberg

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We investigate a complementary objective lens design for correcting chromatic aberration in the use of a silicon aplanatic solid immersion lens for back-side photon emission microscopy of metal-oxide-semiconductor circuits. Our simulations demonstrate that the chromatic aberration due to material dispersion of aplanatic silicon solid immersion lenses can be reduced by more than an order of magnitude in the spectral window 1.5μm-2.1μm, providing new diffraction limited performance. On-axis and off-axis imaging performance of the proposed optical design is evaluated.

Original languageEnglish (US)
Title of host publicationISTFA 2011 - Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis
Pages406-409
Number of pages4
StatePublished - Dec 1 2011
Event37th International Symposium for Testing and Failure Analysis, ISTFA 2011 - San Jose, CA, United States
Duration: Nov 13 2011Nov 17 2011

Publication series

NameConference Proceedings from the International Symposium for Testing and Failure Analysis

Other

Other37th International Symposium for Testing and Failure Analysis, ISTFA 2011
CountryUnited States
CitySan Jose, CA
Period11/13/1111/17/11

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

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