Codoping in p-type, epitaxial GaN grown by metal-organic vapour phase epitaxy (MOVPE) was investigated. An enhancement of hole concentration was observed experimentally in p-type GaN:Mg codoped with oxygen donors. The hole concentration of GaN:Mg codoped with oxygen increased super-linearly fmm 8×1016 to 2×1018 cm-3 upon increasing the oxygen dopant partial pressure. A factor of 3-5 enhancement of hole concentration was measured for a fixed oxygen partial pressure during the growth of p-type GaN:Mg. However, when Si was codoped with GaN:Mg, the hole concentration remained constant. Current experimental results are compared with the existing theory of codoping in GaN.
|Original language||English (US)|
|Number of pages||7|
|State||Published - Jan 1 2002|
- p-type conductivity
ASJC Scopus subject areas
- Materials Science(all)
- Electrical and Electronic Engineering