Codoping of wide gap epitaxial III-Nitride semiconductors

R. Y. Korotkov*, J. M. Gregie, B. W. Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

18 Scopus citations

Abstract

Codoping in p-type, epitaxial GaN grown by metal-organic vapour phase epitaxy (MOVPE) was investigated. An enhancement of hole concentration was observed experimentally in p-type GaN:Mg codoped with oxygen donors. The hole concentration of GaN:Mg codoped with oxygen increased super-linearly fmm 8×1016 to 2×1018 cm-3 upon increasing the oxygen dopant partial pressure. A factor of 3-5 enhancement of hole concentration was measured for a fixed oxygen partial pressure during the growth of p-type GaN:Mg. However, when Si was codoped with GaN:Mg, the hole concentration remained constant. Current experimental results are compared with the existing theory of codoping in GaN.

Original languageEnglish (US)
Pages (from-to)243-249
Number of pages7
JournalOpto-electronics Review
Volume10
Issue number4
StatePublished - Jan 1 2002

Keywords

  • Codoping
  • GaN
  • p-type conductivity

ASJC Scopus subject areas

  • Radiation
  • Materials Science(all)
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'Codoping of wide gap epitaxial III-Nitride semiconductors'. Together they form a unique fingerprint.

Cite this