Coexistence of large thermopower and degenerate doping in the nanostructured material Ag0.85SnSb1.15Te3

John Androulakis; Robert Pcionek; Eric Quarez; Jun Huang Do; Huijun Kong; Oleg Palchik; C. Uher; Jonathan James D'Angelo; Jarrod Short; Tim Hogan; Mercouri G. Kanatzidis

doi:10.1021/cm061151p

Coexistence of large thermopower and degenerate doping in the nanostructured material Ag_0.85SnSb_1.15Te₃

John Androulakis, Robert Pcionek, Eric Quarez, Jun Huang Do, Huijun Kong, Oleg Palchik, C. Uher, Jonathan James D'Angelo, Jarrod Short, Tim Hogan, Mercouri G. Kanatzidis^*

^*Corresponding author for this work

Chemistry

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Abstract

Ag_1∓xSnSb1+xTe3 with a combination of thermoelectric properties was investigated. This compound is a non-stoichiometric derivative of AgSnSbTe3 which is formed from the combination of two isotopic narrow band gap semiconductors. The initial charge was sealed in evacuated fused silical tubes, heated at 1000 °, held there for 4 days and then slowly cooled to room temperature. The Hall voltage was positive and the Hall coefficient was linear in field up to the highest magnetic field measured and at all temperatures indicating p-type conduction. High resolution microscopy study of the material indicates that the system is a nanostructured composite, rather than a solid solution. Results show that the development of distinct nanostructuring arises from thermo-dynamically driven compositional fluctuations and leads to a very low thermal conductivity which is in accord with results on thermal transport in heterogeneous systems.

Original language	English (US)
Pages (from-to)	4719-4721
Number of pages	3
Journal	Chemistry of Materials
Volume	18
Issue number	20
DOIs	https://doi.org/10.1021/cm061151p
State	Published - Oct 3 2006

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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title = "Coexistence of large thermopower and degenerate doping in the nanostructured material Ag0.85SnSb1.15Te3",

abstract = "Ag1∓xSnSb1+xTe3 with a combination of thermoelectric properties was investigated. This compound is a non-stoichiometric derivative of AgSnSbTe3 which is formed from the combination of two isotopic narrow band gap semiconductors. The initial charge was sealed in evacuated fused silical tubes, heated at 1000 °, held there for 4 days and then slowly cooled to room temperature. The Hall voltage was positive and the Hall coefficient was linear in field up to the highest magnetic field measured and at all temperatures indicating p-type conduction. High resolution microscopy study of the material indicates that the system is a nanostructured composite, rather than a solid solution. Results show that the development of distinct nanostructuring arises from thermo-dynamically driven compositional fluctuations and leads to a very low thermal conductivity which is in accord with results on thermal transport in heterogeneous systems.",

author = "John Androulakis and Robert Pcionek and Eric Quarez and Do, {Jun Huang} and Huijun Kong and Oleg Palchik and C. Uher and D'Angelo, {Jonathan James} and Jarrod Short and Tim Hogan and Kanatzidis, {Mercouri G.}",

note = "Funding Information: Dr. N. Asthana is grateful to the Department of Science and Technology, Government of India, for awarding the WoS-A Project (SR/WOS-A/CS-114/2016). ",

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doi = "10.1021/cm061151p",

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AU - Androulakis, John

AU - Pcionek, Robert

AU - Quarez, Eric

AU - Do, Jun Huang

AU - Kong, Huijun

AU - Palchik, Oleg

AU - Uher, C.

AU - D'Angelo, Jonathan James

AU - Short, Jarrod

AU - Hogan, Tim

AU - Kanatzidis, Mercouri G.

N1 - Funding Information: Dr. N. Asthana is grateful to the Department of Science and Technology, Government of India, for awarding the WoS-A Project (SR/WOS-A/CS-114/2016).

PY - 2006/10/3

Y1 - 2006/10/3

N2 - Ag1∓xSnSb1+xTe3 with a combination of thermoelectric properties was investigated. This compound is a non-stoichiometric derivative of AgSnSbTe3 which is formed from the combination of two isotopic narrow band gap semiconductors. The initial charge was sealed in evacuated fused silical tubes, heated at 1000 °, held there for 4 days and then slowly cooled to room temperature. The Hall voltage was positive and the Hall coefficient was linear in field up to the highest magnetic field measured and at all temperatures indicating p-type conduction. High resolution microscopy study of the material indicates that the system is a nanostructured composite, rather than a solid solution. Results show that the development of distinct nanostructuring arises from thermo-dynamically driven compositional fluctuations and leads to a very low thermal conductivity which is in accord with results on thermal transport in heterogeneous systems.

AB - Ag1∓xSnSb1+xTe3 with a combination of thermoelectric properties was investigated. This compound is a non-stoichiometric derivative of AgSnSbTe3 which is formed from the combination of two isotopic narrow band gap semiconductors. The initial charge was sealed in evacuated fused silical tubes, heated at 1000 °, held there for 4 days and then slowly cooled to room temperature. The Hall voltage was positive and the Hall coefficient was linear in field up to the highest magnetic field measured and at all temperatures indicating p-type conduction. High resolution microscopy study of the material indicates that the system is a nanostructured composite, rather than a solid solution. Results show that the development of distinct nanostructuring arises from thermo-dynamically driven compositional fluctuations and leads to a very low thermal conductivity which is in accord with results on thermal transport in heterogeneous systems.

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Coexistence of large thermopower and degenerate doping in the nanostructured material Ag_0.85SnSb_1.15Te₃

Abstract

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