A coincidence of reciprocal lattice planes model was developed to calculate the interfacial energy in quasicrystal-crystal epitaxy. This model allows a quantitative description of the interface as opposed to previously employed qualitative models that consider symmetry relations and alignment of rotation axes. Computations were carried out on several types of quasicrystal-crystal systems, namely, the crystalline structures on various surfaces of single quasicrystals (Al-Cu-Fe, Al-Ni-Co, and Al-Cu-Co) caused by ion bombardment, the crystalline thin films grown on quasicrystal substrates, and the quasicrystalline thin films grown on crystalline substrates. This model can also be extended to include quasicrystal-quasicrystal epitaxy.
|Original language||English (US)|
|Journal||Physical Review B - Condensed Matter and Materials Physics|
|State||Published - 2003|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics