Combinatorial generation and analysis of nanometer- and micrometer-scale silicon features via `dip-pen' nanolithography and wet chemical etching

Dana A. Weinberger, Seunghun Hong, Chad A. Mirkin, B. W. Wessels, Thomas B. Higgins

Research output: Contribution to journalArticlepeer-review

116 Scopus citations

Abstract

Dip-pin nanolithography (DPN), a soft lithographic technique that utilize an atomic force microscope (AFM) tip to `write' molecules onto substrates, was used to deposit monolayer-based resists with micrometer to sub-100 nm dimensions on the surfaces of Au/Ti/Si trilayer substrates. Wet chemical etchants were used to remove the unprotected substrate layers, resulting in three-dimensional solid-state features with comparable dimensions. Dip-pin nanolithography has the potential to serve as an alternative to the complicated and more expensive hard lithography techniques.

Original languageEnglish (US)
Pages (from-to)1600-1603
Number of pages4
JournalAdvanced Materials
Volume12
Issue number21
DOIs
StatePublished - Nov 2 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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