Compact GaAs electro-optic (EO) modulator with ultra low switching voltage and large bandwidth enabled by transparent conducting (TC) bridge electrodes

Fei Yi; Fang Ou; Boyang Liu; Yingyan Huang; Seng-Tiong Ho

Compact GaAs electro-optic (EO) modulator with ultra low switching voltage and large bandwidth enabled by transparent conducting (TC) bridge electrodes

Fei Yi^*, Fang Ou, Boyang Liu, Yingyan Huang, Seng-Tiong Ho

^*Corresponding author for this work

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We propose a compact GaAs EO modulator structure with ultra low switching voltage (∼0.5 V) and large modulation bandwidth (f_3dbo ≈ 50GHz), enabled by transparent conducting (TC) material as bridge electrodes.

Original language	English (US)
Title of host publication	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication	2010 Laser Science to Photonic Applications, CLEO/QELS 2010
State	Published - Oct 11 2010
Event	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States Duration: May 16 2010 → May 21 2010

Other

Other	Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
Country/Territory	United States
City	San Jose, CA
Period	5/16/10 → 5/21/10

ASJC Scopus subject areas

Electrical and Electronic Engineering
Radiation

Cite this

@inproceedings{07059f71a5674852b12edc06f1242eeb,

title = "Compact GaAs electro-optic (EO) modulator with ultra low switching voltage and large bandwidth enabled by transparent conducting (TC) bridge electrodes",

abstract = "We propose a compact GaAs EO modulator structure with ultra low switching voltage (∼0.5 V) and large modulation bandwidth (f3dbo ≈ 50GHz), enabled by transparent conducting (TC) material as bridge electrodes.",

author = "Fei Yi and Fang Ou and Boyang Liu and Yingyan Huang and Seng-Tiong Ho",

year = "2010",

month = oct,

day = "11",

language = "English (US)",

isbn = "9781557528902",

booktitle = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference",

note = "Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 ; Conference date: 16-05-2010 Through 21-05-2010",

}

Yi, F, Ou, F, Liu, B, Huang, Y & Ho, S-T 2010, Compact GaAs electro-optic (EO) modulator with ultra low switching voltage and large bandwidth enabled by transparent conducting (TC) bridge electrodes. in Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010., 5499830, Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010, San Jose, CA, United States, 5/16/10.

Compact GaAs electro-optic (EO) modulator with ultra low switching voltage and large bandwidth enabled by transparent conducting (TC) bridge electrodes. / Yi, Fei; Ou, Fang; Liu, Boyang et al.

Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010. 2010. 5499830.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - Compact GaAs electro-optic (EO) modulator with ultra low switching voltage and large bandwidth enabled by transparent conducting (TC) bridge electrodes

AU - Yi, Fei

AU - Ou, Fang

AU - Liu, Boyang

AU - Huang, Yingyan

AU - Ho, Seng-Tiong

PY - 2010/10/11

Y1 - 2010/10/11

N2 - We propose a compact GaAs EO modulator structure with ultra low switching voltage (∼0.5 V) and large modulation bandwidth (f3dbo ≈ 50GHz), enabled by transparent conducting (TC) material as bridge electrodes.

AB - We propose a compact GaAs EO modulator structure with ultra low switching voltage (∼0.5 V) and large modulation bandwidth (f3dbo ≈ 50GHz), enabled by transparent conducting (TC) material as bridge electrodes.

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UR - http://www.scopus.com/inward/citedby.url?scp=77957551535&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:77957551535

SN - 9781557528902

BT - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference

T2 - Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010

Y2 - 16 May 2010 through 21 May 2010

ER -

Compact GaAs electro-optic (EO) modulator with ultra low switching voltage and large bandwidth enabled by transparent conducting (TC) bridge electrodes

Abstract

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ASJC Scopus subject areas

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