Compact GaAs electro-optic (EO) modulator with ultra low switching voltage and large bandwidth enabled by transparent conducting (TC) bridge electrodes

Fei Yi*, Fang Ou, Boyang Liu, Yingyan Huang, Seng-Tiong Ho

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We propose a compact GaAs EO modulator structure with ultra low switching voltage (∼0.5 V) and large modulation bandwidth (f3dbo ≈ 50GHz), enabled by transparent conducting (TC) material as bridge electrodes.

Original languageEnglish (US)
Title of host publicationLasers and Electro-Optics/Quantum Electronics and Laser Science Conference
Subtitle of host publication2010 Laser Science to Photonic Applications, CLEO/QELS 2010
StatePublished - Oct 11 2010
EventLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010 - San Jose, CA, United States
Duration: May 16 2010May 21 2010

Other

OtherLasers and Electro-Optics/Quantum Electronics and Laser Science Conference: 2010 Laser Science to Photonic Applications, CLEO/QELS 2010
CountryUnited States
CitySan Jose, CA
Period5/16/105/21/10

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Radiation

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