Comparative Evaluation of Spin-Transfer-Torque and Magnetoelectric Random Access Memory

Shaodi Wang, Hochul Lee, Farbod Ebrahimi, P. Khalili Amiri, Kang L. Wang, Puneet Gupta

Research output: Contribution to journalArticle

49 Scopus citations

Abstract

Spin-Transfer torque random access memory (STT-RAM), as a promising nonvolatile memory technology, faces challenges of high write energy and low density. The recently developed magnetoelectric random access memory (MeRAM) enables the possibility of overcoming these challenges by the use of voltage-controlled magnetic anisotropy (VCMA) effect and achieves high density, fast speed, and low energy simultaneously. As both STT-RAM and MeRAM suffer from the reliability problem of write errors, we implement a fast Landau-Lifshitz-Gilbert equation-based simulator to capture their write error rate (WER) under process and temperature variation. We utilize a multi-write peripheral circuit to minimize WER and design reliable STT-RAM and MeRAM. With the same acceptable WER, MeRAM shows advantages of 83% faster write speed, 67.4% less write energy, 138% faster read speed, and 28.2% less read energy compared with STT-RAM. Benefiting from the VCMA effect, MeRAM also achieves twice the density of STT-RAM with a 32 nm technology node, and this density difference is expected to increase with technology scaling down.

Original languageEnglish (US)
Article number7448479
Pages (from-to)134-145
Number of pages12
JournalIEEE Journal on Emerging and Selected Topics in Circuits and Systems
Volume6
Issue number2
DOIs
StatePublished - Jun 1 2016

Keywords

  • Evaluation
  • magnetic tunnel junctions (MTJ)
  • magnetoelectric random access memory (MeRAM)
  • spin-Transfer torque RAM (STT-RAM)
  • voltage controled memory
  • write energy
  • write error rate
  • write speed

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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