Comparative optical studies of p-type and unintentionally doped GaN: The influence of annealing

S. Guha*, R. C. Keller, V. Yang, F. Shahedipour, Bruce W Wessels

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

We present Raman studies of p-type and unintentionally doped GaN epitaxial layers grown by metalorganic vapor phase epitaxy onto c-plane sapphire substrates. The E2 (high) Raman mode from a series of thermally annealed p-type samples shows that a compressive lattice distortion is induced with increasing annealing temperature. This is further corroborated by our photoluminescence measurements which show that the blue luminescence at 2.8 eV undergoes a redshift upon increasing the annealing temperatures beyond 650°C. In comparing the Raman and photoluminescence spectra from the various samples we discuss the importance of two possible mechanisms: local distortion and longitudinal optical phonon-plasmon coupling.

Original languageEnglish (US)
Pages (from-to)58-60
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number1
DOIs
StatePublished - Jan 1 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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