Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors

Kangho Lee; Gang Lu; Antonio Facchetti; David B. Janes; Tobin J. Marks

doi:10.1063/1.2899965

Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors

Kangho Lee, Gang Lu, Antonio Facchetti, David B. Janes, Tobin J. Marks

Chemistry

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Control of semiconductor interface state density with molecular passivation is essential for developing conduction-based biosensors. In this study, GaAs junction field effect transistors (JFETs) are fabricated and characterized before and after passivation of the GaAs surface with self-assembled mono- and multilayers. The JFETs functionalized with 1-octadecanethiol monolayers and two types of self-assembled organic nanodielectric (SAND) multilayers exhibit significantly different threshold voltage (Vth) and subthreshold slope (Ssub) characteristics versus the unpassivated devices and provide useful information on the quality of the passivation. Two-dimensional device simulations quantify the effective density of fixed surface charges and interfacial traps and argue for the importance of the type-III SAND ionic charges in enhancing GaAs JFET response characteristics.

Original language	English (US)
Article number	123509
Journal	Applied Physics Letters
Volume	92
Issue number	12
DOIs	https://doi.org/10.1063/1.2899965
State	Published - 2008

Funding

We thank the NASA Institute for Nanoelectronics and Computing (NCC 2-1363) and the Northwestern University NSF MRSEC (DMR-0520513) for support of this research.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2899965

Cite this

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title = "Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors",

abstract = "Control of semiconductor interface state density with molecular passivation is essential for developing conduction-based biosensors. In this study, GaAs junction field effect transistors (JFETs) are fabricated and characterized before and after passivation of the GaAs surface with self-assembled mono- and multilayers. The JFETs functionalized with 1-octadecanethiol monolayers and two types of self-assembled organic nanodielectric (SAND) multilayers exhibit significantly different threshold voltage (Vth) and subthreshold slope (Ssub) characteristics versus the unpassivated devices and provide useful information on the quality of the passivation. Two-dimensional device simulations quantify the effective density of fixed surface charges and interfacial traps and argue for the importance of the type-III SAND ionic charges in enhancing GaAs JFET response characteristics.",

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AU - Lee, Kangho

AU - Lu, Gang

AU - Facchetti, Antonio

AU - Janes, David B.

AU - Marks, Tobin J.

N1 - Funding Information: We thank the NASA Institute for Nanoelectronics and Computing (NCC 2-1363) and the Northwestern University NSF MRSEC (DMR-0520513) for support of this research.

PY - 2008

Y1 - 2008

N2 - Control of semiconductor interface state density with molecular passivation is essential for developing conduction-based biosensors. In this study, GaAs junction field effect transistors (JFETs) are fabricated and characterized before and after passivation of the GaAs surface with self-assembled mono- and multilayers. The JFETs functionalized with 1-octadecanethiol monolayers and two types of self-assembled organic nanodielectric (SAND) multilayers exhibit significantly different threshold voltage (Vth) and subthreshold slope (Ssub) characteristics versus the unpassivated devices and provide useful information on the quality of the passivation. Two-dimensional device simulations quantify the effective density of fixed surface charges and interfacial traps and argue for the importance of the type-III SAND ionic charges in enhancing GaAs JFET response characteristics.

AB - Control of semiconductor interface state density with molecular passivation is essential for developing conduction-based biosensors. In this study, GaAs junction field effect transistors (JFETs) are fabricated and characterized before and after passivation of the GaAs surface with self-assembled mono- and multilayers. The JFETs functionalized with 1-octadecanethiol monolayers and two types of self-assembled organic nanodielectric (SAND) multilayers exhibit significantly different threshold voltage (Vth) and subthreshold slope (Ssub) characteristics versus the unpassivated devices and provide useful information on the quality of the passivation. Two-dimensional device simulations quantify the effective density of fixed surface charges and interfacial traps and argue for the importance of the type-III SAND ionic charges in enhancing GaAs JFET response characteristics.

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Comparative passivation effects of self-assembled mono- and multilayers on GaAs junction field effect transistors

Abstract

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