Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates

D. J. Rogers, P. Bove, F. Hosseini Teherani, K. Pantzas, T. Moudakir, G. Orsal, G. Patriarche, S. Gautier, A. Ougazzaden, V. E. Sandana, R. McClintock, M. Razeghi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations

Abstract

InGaN-based p-i-n structures were transferred from sapphire to soda-lime glass substrates using two approaches: (1) laser-lift-off (LLO) and thermo-metallic bonding and (2) chemical lift-off (LLO) by means sacrificial ZnO templates and direct wafer bonding. Both processes were found to function at RT and allow reclaim of the expensive single crystal substrate. Both approaches have also already been demonstrated to work for the wafer-scale transfer of III/V semiconductors. Compared with the industry-standard LLO, the CLO offers the added advantages of a lattice match to InGaN with higher indium contents, no need for an interfacial adhesive layer (which facilitates electrical, optical and thermal coupling), no damaged/contaminated GaN surface layer, simplified sapphire reclaim (GaN residue after LLO may complicate reclaim) and cost savings linked to elimination of the expensive LLO process.

Original languageEnglish (US)
Title of host publicationOxide-Based Materials and Devices IV
DOIs
StatePublished - May 30 2013
EventOxide-Based Materials and Devices IV - San Francisco, CA, United States
Duration: Feb 3 2013Feb 6 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8626
ISSN (Print)0277-786X

Other

OtherOxide-Based Materials and Devices IV
CountryUnited States
CitySan Francisco, CA
Period2/3/132/6/13

Keywords

  • Chemical lift-off
  • GaN
  • Glass
  • LED
  • Laser lift-off
  • Photovoltaic
  • Transfer
  • Wafer bonding

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Rogers, D. J., Bove, P., Teherani, F. H., Pantzas, K., Moudakir, T., Orsal, G., Patriarche, G., Gautier, S., Ougazzaden, A., Sandana, V. E., McClintock, R., & Razeghi, M. (2013). Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates. In Oxide-Based Materials and Devices IV [862611] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8626). https://doi.org/10.1117/12.2010046