Abstract
Grazing incidence x-ray scattering and cross-sectional high-resolution electron microscopy (HREM) have been applied to the study of thin trilayers of the miscible system Co-Cr-Co grown by ultra-high vacuum evaporation on silicon. Good agreement was found between numerical values for layer thickness deduced by the two techniques. The Co-Cr interface roughness was found to be low with substantial interdiffusion, significantly greater than the roughness amplitude. HREM images confirmed the diffuseness of the interfaces. The roughness had a lateral correlation length of typically 150 Å and a very low fractal parameter h of 0.15. The correlation length was always found to correspond to the lateral grain size observed in the HREM images.
Original language | English (US) |
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Pages (from-to) | A231-A235 |
Journal | Journal of Physics D: Applied Physics |
Volume | 36 |
Issue number | 10 A |
DOIs | |
State | Published - May 21 2003 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films